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APTRG8A120

APTRG8A120

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    APTRG8A120 - Dual IGBT Isolated Driver - Microsemi Corporation

  • 数据手册
  • 价格&库存
APTRG8A120 数据手册
APTRG8A120 Dual IGBT Isolated Driver +V1 SHORT CI RCUIT P ROTECTION VCmax = 1200V IOUTpeak = 8A @ Tc = 25°C VC1 Gon1 Goff1 0V1 H1 H2 Logic Circuit DRIVER 1 0V1 0V1 - V1 VC2 RESET FAULT OUT GND + 5V Drive Interlock +V2 SHORT CI RCUIT P ROTECTION Applicatio n • Driver dedicated to IGBT Power modules in : - Motor Control - Uninterruptible Power Supplies - Switched Mode Power Supplies - Welding converters - Automotive Features • Drive IGBTs up to IC=300A, VCE=1200V • Short circuit protection by VCEsat monitoring • Low speed overcurrent cut off to limit over voltage • Under voltage Lockout with hysteresis • Top Bottom input signals Interlock • Switching frequency up to 50 kHz • Low stray inductance • High level of integration • Isolated driver Benefits • Outstanding performance at high frequency operation • Rugged • Stable temperature behavior • Very high noise immunity (common mode rejection > 10kV/µs) • 2500V Galvanic Isolation primary/secondary • 5V logic level with Schmitt-trigger Input • Single VDD =15V supply required • Positive & Negative Secondary auxiliary power supplies internally generated • Separate sink & Source output for easy Gate drive (optimized turn on & turn off operation) • Mounting with screws for good vibration withstand • Solderable pins 0V2 Gon2 Goff2 +15V 0/15V ISOLATED DC /DC C ON VERTER S +V1 0V1 -V1 0V2 -V2 DRIVER 2 0V2 0V2 -V2 +V2 VC 2 GND FAULT OUT RESET H2 H1 0/15V +15V Gon 2 Goff 2 0V 2 0V 1 Goff 1 Gon 1 VC 1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-4 APTRG8A120 – Rev 1 August, 2006 APTRG8A120 +5V IN1 BUFFER 1K 1nF 5.1V DUAL DRIVER CIRCUIT FAU LT Memorisation VC1 +VBUS SHORT CIRCUIT PROTECT VCEsat V1 0V1 Gon1 G off1 2R 5W 0VBUS IN2 GND 1K +5V BUFFER CIRCUIT LOGIC 1nF 5.1V TOP DRIVER SOFT TURN OFF And UVLO 0V1 0V1 0.5R 5W 1R 10W 2.7K HIGH POWER IGBT And INTERLOCK DRIVE PWM GEN ERATOR BUFFER RESET FAULT OUT GND -V1 V2 FAU LT Memorisation VC2 OUT 5.1V 1nF BUFFER 1nF 1K SHORT CIRCUIT PROTECT VCEsat 0V2 Gon2 Goff2 2R 5W GND +15V + 47MF 15V AUX. SUPPLY (1A) G ND + 5.1V GND +5V BOTTOM DRIVER SOFT TURN OFF And UVLO 0V2 0V2 0.5R 5W 1R 10W ISOLATED DC /DC CONVERTERS HIGH POWER IGBT 0/15V G ND -V2 0VBUS fig 1:Typical phase leg Operation Block Diagram All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings Symbol VDD VHi IVDDmax fmax VC IoutA Vmax R Gonmin R Goffmin Pout Parameter Max ratings 16 5.5 0.3 1 50 1200 270 2 1 4 Unit V A kHz V mA Ω W Supply Voltage Input signal voltage i=1, 2 Maximum Supply current VHi = 0 V, i =1, 2 VDD=15V, Fout = 25 kHz, Ceff=150nF Maximum Switching Frequency @ Tamb=85°C Collector Voltage short circuit protection pin Output Average Current Minimum resistance for RGon Minimum resistance for RGoff Output Power DC/DC converter Per Output Per Output www.microsemi.com 2-4 APTRG8A120 – Rev 1 August, 2006 APTRG8A120 Driver Electrical Characteristics Symbol VDD IVDD VUVLO VHi(max) VHi(th+) VHi(th-) CHi RHi VG(on) VG(off) Td(on) Td(off) PWD PDD Ifault VfaultH VfaultL Tdfault TSC ISC CPS RPW RR FR Characteristic Operating Supply Voltage Operating Supply Current Under Voltage lockout threshold Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Capacitance * Input Resistance * Turn on Gate Voltage Output Turn off Gate Voltage Output Test Conditions Fout =25kHz,VDD=15V,VBus=600V Ceff=150nF on Channel 1&2 Min 14.5 11.6 -0.5 2 Typ 15 0.75 12.3 5 Max 15.5 13.5 5.5 0.8 Unit V A V V i = 1, 2 No Load RGon=2Ω, Fout = 25kHz, Ceff =150nF 14 -7 200 220 -0.3 -0.35 No Load RGoff=1Ω, Fout = 25kHz, Ceff =150nF Turn On delay time Ceff = 150nF Turn Off delay time Ceff = 150nF Pulse Width Distortion Propagation Delay Difference Td(on) - Td(off) between any two driver Output fault current Fault condition High Output Fault Voltage No fault Low Output Fault Voltage Fault condition Desat Fault Output Delay Time VDD=15V Total Short Circuit Duration T sc=6µs, VBus=600V, VGE=15V Short Circuit Current Coupling Capacitance Primary Secondary Reset Pulse Width Logic high for reset Reset Input Resistance Fault output pull-up resistance 1 1 15 14 -6 -5 400 420 0.02 nF kΩ 16 -5 500 520 0.3 0.35 7 V ns µs mA V µs µs A pF µs kΩ 5 0.5 5 6 950 20 20 1 2.7 * Low impedance guarantees good noise immunity. Dead time between top and bottom inputs signals must be generated externally in case of phase leg operation Thermal and package characteristics Symbol VISOL TOP TSTG Torque Wt Characteristic Primary to Secondary Isolation Operating Ambient Temperature Storage Temperature Range Mounting torque Package Weight Min 2500 -40 -55 M3 Typ Max 85 100 Unit V °C N.m g 0.5 120 www.microsemi.com 3-4 APTRG8A120 – Rev 1 August, 2006 APTRG8A120 Driver Package outline (dimensions in mm) VC 2 GND FAULT OUT RESET H2 H1 0/15V +15V Gon 2 Goff 2 0V 2 0V 1 Goff 1 Gon 1 VC 1 Frequency vs Gate effective Capacitor 110 100 90 80 FR Q (Khz) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 200 225 250 275 300 Tamb=25°C Tamb=70°C CEFF (nF) M icrosemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTRG8A120 – Rev 1 August, 2006 0
APTRG8A120 价格&库存

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