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ARF1500
ARF1500
BeO 1525-xx
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
• Specified 125 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • RoHS Compliant • • • •
S
G
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G
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125V
750W
40MHz
The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
High Performance Power RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF1500 UNIT Volts Amps Volts Watts °C
500 60 ±30 1500 -55 to 175 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) On State Drain Voltage
1
MIN
TYP
MAX
UNIT Volts μA nA mhos Volts
500 6 7.5 100 1000 ±400 6 TBD 3 5 7.5
(I D(ON) = 30A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 30A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted) RθJC RθJHS Junction to Case Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT °C/W
10-2008 050-5965 Rev E
0.10 0.16
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 250 ID = 60A @ 25°C RG = 1.6Ω MIN TYP MAX
ARF1500
UNIT
5150 500 215 7.5 6.0 20 10
6030 650 225
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol GPS η Ψ
1
Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1
Test Conditions f = 27.12 MHz VGS = 0V VDD = 125V
MIN
TYP
MAX
UNIT dB %
17 70
19 75
Pout = 750W
No Degradation in Output Power
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000 10,000 5000 CAPACITANCE (pf) Ciss
1000 500
Coss Crss
100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
60 ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 TJ = +25°C TJ = +125°C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES)
VDS> ID(ON) x RDS(ON) MAX. 250 μSEC. PULSE TEST @
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