ARF1519

ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. • Specified 250 Volt, 13.56 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF1519 UNIT Volts Amps Volts Watts °C 1000 20 ±30 1350 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 300μA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts μA nA mhos Volts 1000 5 7 300 3000 ±600 3 TBD 2 4 14 (I D(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 10A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 6mA) Volts THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT 2-2008 050-4935 Rev B 0.13 0.09 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 150V f = 1 MHz MIN TYP MAX ARF1519 UNIT 4600 310 90 5600 350 120 pF FUNCTIONAL CHARACTERISTICS Symbol GPS η Ψ 1 Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 13.56MHz VGS = 0V VDD = 200V MIN TYP MAX UNIT dB % 17 70 20 75 Pout = 750W No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 60 ID, DRAIN CURRENT (AMPERES) Ciss CAPACITANCE (pf) 50 40 30 20 10 TJ = +25°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @