ARF441

D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. • Specified 50 Volt, 13.56 MHz Characteristics: • Output Power = 125 Watts. • Gain = 21dB (Typ.) • Efficiency = 63% (Typ.) • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF440/441 VDSS Drain-Source Voltage 150 VDGO Drain-Gate Voltage 150 ID UNIT Volts Continuous Drain Current @ TC = 25°C 11 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 167 Watts Junction to Case 0.75 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 150 VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX UNIT Volts (ID(ON) = 10A, VGS = 10V) 6 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 10V, ID = 5.5A) 4 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 2 5 µA nA mhos 5 Volts APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4406 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. ARF440/441 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss MIN TYP MAX 755 900 VDS = 50V 155 215 f = 1 MHz 55 90 MAX VGS = 0V Reverse Transfer Capacitance UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Test Conditions MIN TYP VDD = 50V 18 21 dB 63 % Common Source Amplifier Power Gain Pout = 125W η Drain Efficiency ψ Electrical Ruggedness VSWR 30:1 IDQ = 200mA UNIT No Degradation in Output Power f = 13.56MHz 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT ATC"B" .01µF C5 0.4µH T2 L2 RF Output C4 Q1 RF Input 0.5µH L1 C6 BFC1 T1 2:1 .01µF ATC"B" 25-240pF C1 75-480pF +Vbias R1 ATC"B" .01µF R3 3.3K 3.3K R2 Q2 C7 C2 T3 3.3K .1µF C8 RFC1 .01µF ATC"B" C9 C3 .1µF C10 .01µF C11 + .1µF VDD = 50V Idq = 0.4A 10µF (50V) Parts List C1 = 75-480pF Compression Mica C2, C3 & C10 = .1µF @ 50V, Novacap #1210B104K500N C4 = 25-240pF Compression Mica C5, C6, C7, C8 & C9 = .01µF @ 50V, Novacap #1210B103K500N C11 = 10µF @ 50V Electrolytic R1, R2 & R3 = 1KΩ, 5%, 1/4W, Carbon Q1 = ARF440 Q2 = ARF441 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH L2 = 6.5 T of #18AWG, ID = .438", L = 0.4µH 050-4406 Rev C BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000 T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850 T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25Ω PTFE coax on a Fair-Rite #2643102002 shield bead. µi = 2000 PCB = .062" G10 Epoxy Glass. ARF440/441 RF POWER OUT (WATTS) 300 Performance of aTypical Push-Pull Power Amplifier (2-Devices) f = 13.56 MHz V = 50V 250 DD I DQ = 400mA - 200mA / Side 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In TJ = +25°C 8 TJ = +125°C 4 TJ = +125°C TJ = +25°C TJ = -55°C ID, DRAIN CURRENT (AMPERES) 5.0 re N) He (O n tio R DS a r y pe B O ited m Li 1 .5 TC =+25°C TJ =+150°C 1 5 10 50 100 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area DS =V GS 1.1 1.0 0.9 0.8 0.7 -50 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 20 .1 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 12 5 4.5 Figure 2, RF Power Out vs RF Power In V VDS = 30V 250µSEC. PULSE TEST @