ARF448BG

ARF448A ARF448B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: ¥ ¥ ¥ Low Cost Common Source RF Package. Output Power = 140 Watts. Very High Breakdown for Improved Ruggedness. Gain = 15dB (Class C) Low Thermal Resistance. Efficiency = 75% Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF448A/448B VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID Continuous Drain Current @ TC = 25°C UNIT Volts 15 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 230 Watts Junction to Case 0.55 °C/W RqJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 450 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX (I D(ON) = 7.5A, VGS = 10V) 3 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 7.5A) 5 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 8.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4908 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol ARF448A/448B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1400 1700 150 200 f = 1 MHz 65 100 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 23 40 RG = 1.6W 12 25 MAX VGS = 0V VDS = 150V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 VDD = 150V Pout = 140W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C VDD = 150V 25 CAPACITANCE (pf) Pout = 250W 20 GAIN (dB) Ciss 15 10 20 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Crss 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 70 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250mSEC. PULSE TEST @