ARF449AG

ARF449A(G) ARF449B(G) D G S *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 90W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. • Specified 150 Volt, 81.36 MHz Characteristics: • Output Power = 90 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF449A/449B(G) VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID UNIT Volts Continuous Drain Current @ TC = 25°C 9 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 165 Watts Junction to Case 0.76 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VDS(ON) IDSS IGSS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 450 On State Drain Voltage 1 TYP MAX Volts (ID(ON) = 5A, VGS = 10V) 4 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 25V, ID = 5A) 3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5.8 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4909 Rev C Symbol ARF449A/449B(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 980 1200 VDS = 150V 87 120 f = 1 MHz 25 40 VGS = 15V 5 10 VDD = 0.5 VDSS 3.1 7 ID = ID[Cont.] @ 25°C 15 25 RG = 1.6ý 3 7 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 12 13 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 VDD = 150V Pout = 90W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 30 Class C VDD = 150V 25 CAPACITANCE (pf) GAIN (dB) 20 15 10 Ciss 1000 Pout = 150W 500 Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-4909 Rev C 7-2003 16 12 10 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 50 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @