ARF460AG

ARF460A/G ARF460B/G 125V, 150W, 65MHz N-CHANNEL ENHANCEMENT MODE TO -2 47 RF POWER MOSFET The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been optimized for both linear and high efficiency classes of operation. Common Source • Specified 125 Volt, 40.68MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness • RoHS Compliant Maximum Ratings Symbol VDSS VDGO ID VGS PD RθJC TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC =25°C unless otherwise specified ARF460AG/BG 500 500 14 ±30 250 0.50 -55 to 150 300 Unit V A V W °C/W °C Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 Min 500 Typ Max Unit V (ID(ON) = 7A, VGS = 10V) 4 25 250 ±100 3.3 3 5.5 8 5 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) μA nA mhos Volts 050-5966 Rev E 10-2007 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss td(ON) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1MHz VGS = 15V VDD = 0.5VDSS ID =ID[Cont.] @ 25°C RG = 1.6Ω Min Typ 1200 150 60 7 6 20 4.0 ARF460AG/BG Max 1400 180 75 pF Unit ns 7 Functional Characteristics Symbol GPS η Ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68MHz Idq = 50mA VDD = 125V POUT = 150W Min 13 70 Typ 15 75 Max Unit dB % No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5000 Ciss 1000 CAPACITANCE (pf) 500 Coss Crss 100 50 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 16 ID, DRAIN CURRENT (AMPERES) TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @