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ARF461A(G) ARF461B(G)
Common Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz
The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C)
• Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • O ptimized SOA for Superior Ruggedness.
• RoHS Compliant
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF461AG/BG 1000 1000 6.5 ±30 250 0.50 -55 to 150 300 Unit V A V W °C/W °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3.25A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 3 4 5 Min 1000 6.5 25 250 ±100 Typ Max Unit V
μA nA mhos Volts
6-2008 050-5987 Rev D
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss td(on) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1MHz VGS = 15V VDD = 0.5VDSS ID = ID (Cont.) @ 25°C RG = 1.6Ω Min Typ 1700 175 50 8 5 21 10.1
ARF461A/B
Max Unit
pF
ns
Functional Characteristics
Symbol GPS η Ψ
1
Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1
Test Conditions f = 40.68MHz VGS = 0V VDD = 250V POUT = 150W
Min 13 70
Typ 15 75
Max
Unit dB %
No Degradation in Output Power
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30 25 20 GAIN (dB) 15 10 5 0 30 Class C VDD = 150V Pout = 150W CAPACITANCE (pf)
5000 Ciss 1000 500 Coss 100 50 Crss
60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency
45
.1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10
8 ID, DRAIN CURRENT (AMPERES)
TJ = -55°C ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @
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