ARF466FL

ARF466FL ARF466FL RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case • Low Cost Flangeless RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF466FL UNIT Volts Amps Volts Watts °C/W °C 1000 1000 13 ±30 450 0.30 -55 to 175 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) Drain-Source On-State Resistance 1 MIN TYP MAX UNIT Volts 1000 ) (VGS = 10V ID = 6.5A , 1.0 25 250 ±100 3.3 2 7 9 4 ohms μA nA mhos 050-4928 Rev B 7-2009 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 500 V ID = 13A @ 25°C RG = 1.6W MIN TYP ARF466FL MAX UNIT 2000 165 75 12 10 43 10 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V MIN TYP MAX UNIT dB % 14 70 16 75 Pout = 300W No Degradation in Output Power 1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 10 5 0 30 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) 10,000 Ciss 1000 500 Coss 100 50 Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 20 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 18 16 14 12 10 8 6 4 2 0 TJ = -55°C TJ = +25°C TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @