ARF467FL

ARF467FL D G ARF467FL RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE S 200V 300W 45MHz The ARF467FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case • Low Cost Flangeless RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF467FL UNIT Volts Amps Volts Watts °C/W °C 1000 1000 12 ±30 425 0.35 -55 to 175 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 MIN TYP MAX UNIT Volts 1000 1.0 25 250 ±100 4 3 6 9 5 (VGS = 10V, ID = 6.5A) ohms µA nA mhos Volts 5-2007 050-4932 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 500 V ID = 12A @ 25°C RG = 1.6Ω MIN TYP MAX ARF467FL UNIT 1900 230 40 12 8 41 10 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 300W MIN TYP MAX UNIT dB % 14 70 16 75 No Degradation in Output Power 1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 4,000 Class C VDD = 150V Ciss 1,000 CAPACITANCE (pf) Pout = 150W 500 Coss 15 10 5 0 30 100 50 Crss 60 75 90 105 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 120 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 35 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @