ARF473

Common Source Push-Pull Pair ARF473 D AR F47 G G RF POWER MOSFET S (Flange) 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Specified 135 Volt, 130 MHz Characteristics: • Output Power = 300 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C (each device) ARF473 UNIT 500 Volts 10 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 500 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 / VGS(TH) ∆VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 On State Drain Voltage 1 TYP MAX 4 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 ±100 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Forward Transconductance Match Ratio (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 4 6 Volts µA nA mhos 0.9 1.1 3 5 0.1 Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) UNIT Volts THERMAL CHARACTERISTICS MIN RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) TYP MAX 0.35 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT °C/W 6-2003 Characteristic 050-4920 Rev C Symbol DYNAMIC CHARACTERISTICS (per section) Symbol Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf GPS η ψ MIN TYP MAX 1200 1600 VDS = 50V 140 200 f = 1 MHz 9 12 VGS = 15V 5.1 10 VDD = 0.5 VDSS 4.1 8 ID = ID[Cont.] @ 25°C 12.8 20 RG = 1.6 Ω 4.0 8 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time FUNCTIONAL CHARACTERISTICS Symbol ARF473 UNIT pF ns (Push-Pull Configuration) Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 130MHz 13 14 dB 50 55 % Idq = 150mA Drain Efficiency Electrical Ruggedness VSWR 5:1 VDD = 135V Pout = 300W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 26 24 Ciss Pout = 300W 1000 CAPACITANCE (pf) 22 GAIN (dB) 3000 Class AB VDD = 125V 20 18 16 14 500 Coss 100 50 12 Crss 10 0 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 80 ID, DRAIN CURRENT (AMPERES) 10 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @