ARF476FL

Common Source Push-Pull Pair D ARF476FL S D D S G S S G S S ARF476FL RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR • Specified 150 Volt, 128 MHz Characteristics: • Output Power = 900 Watts Peak • Gain = 15dB (Class AB) • Efficiency = 50% min MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. (each device) D S G G S 165V 450W 150MHz The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Extended Flange - 3mm Creep Distance. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. All Ratings: TC = 25°C unless otherwise specified. ARF476FL UNIT Volts Amps Volts Watts °C 500 500 10 ±30 910 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS (each device) Symbol BVDSS VDS(ON) IDSS IGSS g fs VGS(TH) ∆VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 2.9 4 100 500 ±100 3 0.9 2 3.3 3.6 1.1 4 0.2 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) µA nA mhos g fs1 g fs2 Forward Transconductance Match Ratio (V = 15V, I = 5A) / DS D Volts THERMAL CHARACTERISTICS Symbol RθJC RθJHS Characteristic Junction to Case Junction to Sink (Use High Efficiency Thermal Grease and Planar Heat Sink Surface.) MIN TYP 0.15 0.30 MAX 0.165 0.33 UNIT °C/W 050-4931 B 6-2007 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF476FL Test Conditions VGS = 0V VDS = 50V f = 1MHz VGS = 15V VDD = 250V ID = ID[Cont.] @ 25°C RG = 1.6 Ω MIN TYP MAX UNIT 780 125 7 5.1 4.1 12 4.0 830 130 9 10 8 18 7 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Test Conditions f = 128 MHz Idq = 15mA VDD = 150V Pout = 900W PW = 3ms 10% duty cycle MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 14 50 16 55 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 30 ID, DRAIN CURRENT (AMPERES) 3000 12V 1000 500 CAPACITANCE (pf) 25 20 Ciss Coss 11V 10V 9V 100 50 Crss 15 8V 10 7V 5 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 10 1 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @