ARF477FL

Common Source Push-Pull Pair D G S S G S S D ARF477FL ARF477FL RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz. • Specified 150 Volt, 65 MHz Characteristics: • Output Power = 400 Watts • • Gain = 15dB (Class AB) Efficiency = 50% min • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. Ratings 500 500 15 ±30 750 -55 to 175 300 Unit V A V W °C MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C (each device) Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1/gfa2 VGS(TH) VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 7.5A) Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Gate Threshold Voltage Match (VDS = VGS, ID = 50mA) 3.5 0.9 3 5.6 Min 500 2.9 4 25 250 ±100 8 1.1 5 0.2 Volts Typ Max Unit V μA nA mhos Thermal Characteristics Symbol RθJC RθJHS Parameter Junction to Case Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Min Typ 0.18 0.30 Max 0.2 0.32 Unit °C/W 050-4952 B 3-2010 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS (per section) Symbol CISS Coss Crss td(on) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1MHz VGS = 15V VDD = 250V ID = ID[Cont.] @ 25°C RG = 1.6 Ω Min Typ 1200 150 60 7 6 20 4.0 7 ARF477FL Max 1400 180 75 pF Unit nS Functional Characteristics Symbol GPS η Ψ Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 65MHz Idq = 0mA VDD = 150V POUT = 400W Min 14 50 Typ 16 55 Max Unit dB % No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 25 ID, DRAIN CURRENT (AMPERES) VGS=15 & 10V → 9V 5000 Ciss CAPACITANCE (pf) 20 8V 15 7V 10 6.5V 6V 5 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 1000 500 Coss Crss 100 50 0 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 16 ID, DRAIN CURRENT (AMPERES) TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @