ARF521

ARF521 165V, 150W, 150MHz N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. RF POWER MOSFET • Specified 125 Volt, 81MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Efficiency = 50% • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Industry Standard Package • Low Vth Thermal Coefficient Maximum Ratings Symbol VDSS ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC =25°C unless otherwise specified ARF521 500 10 ±30 250 -55 to 175 300 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) Drain-Source On-State Resistance 1 Min 500 Typ Max Unit V (ID(ON) = 5A, VGS = 10V) 0.56 0.8 25 250 ±100 Ω μA nA mhos Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 3 2 3.6 4 Volts Thermal Characteristics Symbol RθJC RθCS Characteristic Junction to Case Thermal Resistance Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.1 Min Typ Max 0.60 Unit °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4930 Rev B 8-2007 Dynamic Characteristics Symbol CISS Coss Crss td(ON) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1MHz VGS = 15V VDD = 0.5VDSS ID =ID[Cont.] @ 25°C RG = 1.6W Min Typ 780 125 7 5.1 4.1 12 4.0 Max 900 150 10 10 8 18 7 ARF521 Unit pF ns Functional Characteristics Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 Test Conditions f = 81MHz Idq = 50mA VDD = 125V POUT = 150W Min 14 50 Typ 15 55 Max Unit dB % No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 25 Class AB VDD = 125V Pout = 150W 20 GAIN (dB) CAPACITANCE (pf) 3000 1000 500 Ciss Coss 100 50 Crss 10 15 10 0 25 50 75 100 125 150 1 .1 1 10 100 200 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 25 20 TJ = +25°C 15 10 5 TJ = +125°C 050-4930 Rev B 8-2007 VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @