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BFR90

BFR90

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    BFR90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

  • 数据手册
  • 价格&库存
BFR90 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 mWatts mW/ ºC MSC1307.PDF 10-25-99 BFR90 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 14 mAdc, VCE = 10 Vdc) 25 250 - DYNAMIC Symbol Ftau CCB Test Conditions Min. Current-Gain – Bandwidth Product (IC = 14 mA, VCE = 10 Vdc, f = 0.5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 5.0 0.5 Max. 1.0 Unit GHz pF MSC1307.PDF 10-25-99 BFR90 FUNCTIONAL Symbol Test Conditions Min. NF Noise Figure (IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Power Gain at Optimum Noise Figure (IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Insertion Gain (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Maximum Stable Gain (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Maximum Unilateral Gain (1) (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Typ. 2.4 3.0 Max. Unit dB GNF |S21| 2 15 15 10 16 11 20 15 18 12.5 - dB dB MSG - - dB G U max - - dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA f S11 (MHz) 100 200 300 500 700 800 1000 |S11| 0.382 0.282 0.217 0.162 0.140 0.135 0.124 ∠φ -41 -77 -101 -131 -151 -159 -176 S21 |S21| 21.21 14.85 10.71 6.78 4.98 4.42 3.59 ∠φ 141 116 104 91 83 80 74 S12 |S12| 0.016 0.028 0.039 0.061 0.082 0.093 0.117 ∠φ 79 74 74 76 76 76 75 S22 |S22| 0.718 0.662 0.599 0.558 0.55 0.552 0.553 -9 ∠φ -18 -20 -24 -28 -29 -33 MSC1307.PDF 10-25-99 BFR90 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 15 11 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 3.5 1 1 3 1 1 1 2.6 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 2.2 MACRO X MACRO X MACRO T MACRO T TO-39 TO-39 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 NPN 1000 NPN 1000 NPN 1000 NPN 1000 PNP NPN 1.3 1.5 2.5 3 5 10 2 2 6 6 5 10 14 10 8 10 17 8000 8000 0.45 1 1 1 2 11 5000 12.5 5000 14 13.5 1400 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 4 3 2 4 1 2 8 1 5 Macro T Macro X Power Macro SO-8 MSC1307.PDF 10-25-99 Ccb(pF) BVCEO IC max (mA) 20 30 30 12 15 25 15 15 12 15 15 15 1 15 15 12 16 17 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 Pout (watts) Freq (MHz) NF (dB) NF IC (mA) NF VCE Package Device GN (dB) Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 10 10 12 15 70 70 100 70 35 30 400 400 BFR90 PIN 1. COLLECTOR 2. EMITTER 3. BASE 1. 2. 3. MSC1307.PDF 10-25-99
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