BFR92ALT1

BFR92ALT1 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES W W W . Microsemi . COM The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! High FTau-4.5GHz ! Low noise-3.0dB@500MHz EL PR Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! Low cost SOT23 package ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) APPLIC APPLICATIONS/BENEFITS Value 20 15 2.0 25 273 150 -55 to +150 Unit V V V mA mW C C ! LNA, Oscillator, Pre-Driver IM 275 Conditions IE = 0 IB = 0 IE = 0 IC = 14mA Conditions RTH(j-c) Junction-Case Thermal Resistance C/W SOT-23 BFR92ALT1 STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Y AR IN Min. 20 15 40 Typ. Max. 50 Units V V nA Min. Typ. 0.7 4.5 3.0 Max. Units PF GHz Symbol BVCBO BVCEO I CBO hFE Test IC = .1mA IC =10mA VCB = 10V VCB =10V DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Symbol CCB FTau NF Test BFR92ALT1 VCB = 10 V f = 1.0 MHz VCE = 10 V IC= 14 mA f = 500MHz VCE = 1.5 VIC= 3.0 mA f = 500MHz dB Copyright 2000 RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Microsemi Page 1 of 1