BFR96

MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal Data P P D D Total Device Dissipation @ TC = 50ºC Derate above 50ºC Total Device Dissipation @ TC = 25ºC Derate above 25ºC Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC 2.5 25 1.25 10 Watts mW/ ºC Watts mW/ ºC Tstg TJmax Revision A- December 2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (Vbe = 2.5 Vdc) MRF581 MRF581A Value Min. 18 15 30 2.5 Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581 MRF581A 50 90 200 250 - DYNAMIC Symbol COB Ftau Test Conditions Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Min. Typ. 2.0 5.0 Max. 3.0 Unit pF GHz Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG FUNCTIONAL Symbol NF Test Conditions Noise Figure (50ohms) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Power Gain @ NFmin (IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Value Min. 13 14 Typ. 3.0 15.5 17.8 20 15 Max. 3.5 Unit dB dB dB dB dB G G NF U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .610 .659 .671 .675 .677 .678 .677 .679 .678 .682 ∠φ -137 -161 -171 -178 176 172 168 184 160 156 |S21| 23.8 13.2 9.0 6.8 5.5 4.6 4.0 3.5 3.1 2.8 ∠φ 116 98 89 83 77 72 68 64 60 56 |S12| .026 .033 .040 .047 .055 .064 .073 .082 .092 .102 ∠φ 46 47 51 55 58 61 62 63 64 65 |S22| .522 .351 .304 .292 .293 .299 .306 .314 .322 .311 ∠φ -78 -106 -120 -128 -132 -134 -135 -136 -138 -139 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor C7, C10 — 10 µF, Tantalum Capacitor RFC — VK–200, Ferroxcube TL1, TL7, TL8 — Microstrip 0.162, x 0.600, TL3 — Microstrip 0.162, x 0.800, TL5 — Microstrip 0.120, x 0.440, TL9, TL10 — Microstrip 0.025, x 4.250, Board Material — 0.0625, Thick Glass Teflon ε r = 2.55 C2, C3 — 1.0–10 pF, Johanson Capacitor R1 — 1.0 kΩ Res. FB — Ferrite Bead, Ferroxcube, 56–590–65/3B TL2 — Microstrip 0.162, x 1.000, TL4 — Microstrip 0.162, x 0.440, TL6 — Microstrip 0.120, x 1.160, Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) Efficiency (%) Gu Max (dB) IC max (mA) Ccb(pF) BVCEO IC max (mA) 3.5 20 400 30 400 30 400 1 1 3 1 1 1 2.6 Pout (watts) NF (dB) NF IC (mA) NF VCE GN (dB) Freq (MHz) Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 175 0.15 175 1 175 1.5 175 1.5 175 1.75 175 3 200 512 512 400 400 470 470 0.5 0.5 1 1 1.5 1.5 18 10 11.5 11.5 11.5 7.8 20 10 13 10 10 11 11 6.5 9.5 8 8 8 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN 200 NPN 200 NPN 200 NPN 300 NPN 300 NPN 450 NPN 450 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 NPN 500 3 10 15 12 15 17 13 1200 1300 900 1600 3.4 30 15 3.4 30 15 4.5 1.5 5.5 50 6 6 11.4 1000 MRF5943, R1, R2 NPN 200 Ftau (MHz) 4000 1400 5000 5000 1300 4500 GPE (dB) GPE VCC Package BVCEO Device Type Packag Type 12 50 15 40 25 150 15 30 15 50 12 35 15 100 15 200 15 200 7.5 50 15 1.5 5 1.9 2 2 2 2.4 2.5 2.5 3 5 2 2 6 5 5 11 5.5 4600 11 14 16.5 5000 14.5 500 MACRO X MRF559 MACRO X MRF559 TO-39 2N3866A SO-8 MRF3866, R1, R2 POWER MACRO MRF555 POWER MACRO MRF555T 65 7.5 16 150 60 12.5 16 150 45 28 30 400 45 28 30 400 50 12.5 16 400 50 12.5 16 400 70 65 55 55 55 7.5 12.5 12.5 12.5 12.5 16 16 16 16 16 150 150 200 400 400 10 10 50 10 2 2 5 10 5 10 15 11 14 15 MRF5812, R1, R2 NPN 500 50 10 15.5 17.8 5000 15 18 20 15 1 15 30 15 50 12 40 16 200 2.5 50 10 90 15 17.8 5000 14.5 4500 2.2 17 200 MACRO X MRF559 NPN 870 0.5 MACRO X MRF559 NPN 870 0.5 SO-8 MRF8372,R1,R2 NPN 870 0.75 POWER MACRO MRF557 NPN 870 1.5 POWER MACRO MRF557T NPN 870 1.5 MACRO X MACRO X MACRO T MACRO T MRF951 MRF571 BFR91 BFR90 NPN 1000 1.3 NPN 1000 2.5 NPN 1000 3 5 2 2 6 6 5 10 14 10 8 10 17 11 8000 0.45 10 100 8000 5000 1 1 1 10 70 12 35 15 30 NPN 1000 1.5 10 12.5 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 1400 2 70 400 70 400 13.5 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 4 3 3 2 4 2 8 1 5 4 Macro T Macro X Power SO-8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER 1. 4. 2. 3. Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct.