CD4766A

• MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 8.5 & 9.1 VOLT NOMINAL ZENER VOLTAGE +5% • ELECTRICALLY EQUIVALENT TO 1N4765 THRU 1N4772A AND 1N4775 THRU 1N4782A SERIES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW CD4765 thru CD4767A and CD4770 thru CD4772A and CD4775 thru CD4777A and CD4780 thru CD4782A 38 23 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C 38 TYPE NUMBER ZENER VOLTAGE vz @ I ZT ZENER TEST CURRENT I ZT MAXIMUM MAXIMUM VOLTAGE ZENER TEMPERATURE IMPEDANCE STABILITY ZZT ³V ZT MAXIMUM (Note 1) mA 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 OHMS 350 350 350 350 350 350 200 200 200 200 200 200 350 350 350 350 350 350 200 200 200 200 200 200 (Note 2) mV 68 141 34 70 14 28 68 141 34 70 14 28 64 132 32 66 13 26 64 132 32 66 13 26 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 0 -55 °C to to to to to to to to to to to to to to to to to to to to to to to to + + + + + + + + + + + + + + + + + + + + + + + + 75 100 75 100 75 100 75 100 75 100 75 100 75 100 75 100 75 100 75 100 75 100 75 100 % / °C 0.01 0.01 0.005 0.005 0.002 0.002 0.01 0.01 0.005 0.005 0.002 0.002 0.01 0.01 0.005 0.005 0.002 0.002 0.01 0.01 0.005 0.005 0.002 0.002 TEMPERATURE EFFECTIVE RANGE TEMPERATURE COEFFICIENT 23 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. FIGURE 1 (Note 3) VOLTS CD4765 CD4765A CD4766 CD4766A CD4767 CD4767A CD4770 CD4770A CD4771 CD4771A CD4772 CD4772A CD4775 CD4775A CD4776 CD4776A CD4777 CD4777A CD4780 CD4780A CD4781 CD4781A CD4782 CD4782A 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 9.1 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 DESIGN DATA METALLIZATION: Top: C (Cathode)...................Al A (Anode)............. .........Al Back: ......................................Au AL THICKNESS............25,000 Å Min GOLD THICKNESS... .....4,000 Å Min CHIP THICKNESS............. .....10 Mils CIRCUIT LAYOUT DATA: Backside must be electrically isolated. Backside is not cathode. For Zener operation cathode must be operated positive with respect to anode. NOTE 1 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the speci½ed mV at any discrete temperature between the established limits, per JEDEC standard No.5. Zener voltage range is +5% TOLERANCES: ALL Dimensions + 2 mils NOTE 2 NOTE 3 6 LAKE STREET, LAWRENCE, PHONE (978) 620-2600 WEBSITE: http://www.microsemi.com M A S S A C H U S E T T S 01841 FAX (978) 689-0803 201 CD4765 thru CD4767A thru CD4770 thru CD4772A and CD4775 thru CD4777A and CD4780 thru CD4782A 1000 500 ZENER IMPEDANCE ZZT (OHMS) 100 50 10 1 2 3 OPERATING CURRENT lZT (mA) FIGURE 2 ZENER IMPEDANCE VS. OPERATING CURRENT +.0015 CHANGE IN TEMPERATURE COEFFICIENT ( %/°C) +.0010 +.0005 0 -.0005 -.0010 -.0015 0.5 1.0 1.5 OPERATING CURRENT lZT (mA) 2.0 FIGURE 3 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT 202