CD483B

• GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW CD483B CD485B CD486B CD645 AND CD5194 thru CD5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified 24 MILS 12 MILS TYPE V(pk) CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 80 180 250 270 80 180 250 V(pk) 70 180 225 225 70 180 225 mA 200 200 200 400 200 200 200 mA 50 50 50 150 50 50 50 A 2 2 2 5 2 2 2 VF(1) TYPE V dc CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IR1 at VRWM TA+25°C nA dc 25 25 25 50 25 25 25 IR2 at VRM TA+25°C IR3 at VRWM TA+150°C CAP @VR =4V pF – – – 2.0 – – – µA 100 100 100 50 100 100 100 µA dc 5 5 5 25 5 5 5 DESIGN DATA METALLIZATION: Top: (Anode)....................Al Back: (Cathode)..............Au AL THICKNESS ............25,000 Å Min GOLD THICKNESS ........4,000 Å Min NOTE 1 AT 100mA (pulsed) except for CD645 which is at 400mA (pulsed) CHIP THICKNESS ..................10 Mils TOLERANCES: ALL Dimensions ± 2 mils 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com 173 12 MILS VRM VRWM IO IO TA=+150°C IFSM tp = 1/120 S TA=25°C 24 MILS CD483B, CD485B, CD486B, CD645, CD5194 1000 thru CD5196 100 IF - Forward Current - (mA) 10 0ºC 15 100 ºC 25º C 1 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3 1000 100 IR - Reverse Current - (µA) 10 1 150ºC 0.1 100º C 25ºC .01 -65ºC -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures 174