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GC2522

GC2522

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    GC2522 - POWER GENERATION Step Recovery Diodes - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
GC2522 数据手册
GC2510 – GC2546 TM ® POWER GENERATION Step Recovery Diodes RoHS Compliant DESCRIPTION The GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Strict material and process controls result in high reproducibility. A unique silicon dioxide passivation process assures greater reliability and low leakage currents at high temperatures. Diodes are available in various capacitance ranges for each of the 4 voltage ratings. These diodes represent the lowest transition time (snap time) available for each voltage rating. Unless otherwise specified, capacitance will be within the range shown below for each type. A capacitance tolerance of ±10% is available at an additional charge. Diodes can be optimized for custom electrical or mechanical specifications. Custom parameters for capacitance, voltage, transition time, series resistance, etc. are available upon request. All specifications shown above are based on the style 30 package. Many packages options are available, including 150A, 35, 36, 42 and 56. Chip mounted on carriers with gold wire/ribbon leads are also available. Other package styles are available to meet specific requirements. Some limitations apply. Contact Microsemi for details. KEY FEATURES  X2 Through X20 Harmonics Generation  Excellent Efficiency  High Output Power  RoHS Compliant 1 www.MICROSEMI.com APPLICATIONS The GC2500 series of step recovery varactors are used as harmonic generators for all orders of multiplication X2 through X20 for both narrow and wide bandwidths. Applications include local oscillators, voltage controlled oscillators, frequency synthesizers, and up converters. They are also used in comb generators to generate a broad frequency spectrum and in high speed pulse shaping circuits. APPLICATIONS/BENEFITS  Harmonics Generation  Local Oscillators  Frequency Synthesizers  Up Converters ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Maximum Leakage Current @80% of Minimum Rated VB Storage Temperature Operating Temperature Symbol IR TSTG TOP Value 50 -65 to +150 -55 to +125 Unit nA GC2510 – GC2546 GC2510 – GC2546 ºC ºC IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled using ESD precautions. 1 The GC2500 Series of products are supplied with a RoHS complaint Gold finish . Copyright  2007 Rev.: 2009-02-03 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GC2510 – GC2546 TM ® POWER GENERATION Step Recovery Diodes RoHS Compliant CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Model Number GC2510 GC2511 GC2512 GC2513 GC2514 GC2515 GC2516 GC2520 GC2521 GC2522 GC2523 GC2524 GC2525 GC2526 GC2530 GC2531 GC2532 GC2533 GC2534 GC2535 GC2536 GC2540 GC2541 GC2542 GC2543 GC2544 GC2545 GC2546 1. 2. 3. 4. IR=10μA Vb(V) Cj(pF)1 @-6V TL(ns)2 (Min) TT(ps) (Typ) 60 60 60 60 60 60 60 70 70 70 70 70 70 70 100 100 100 100 100 100 100 150 150 150 150 150 150 150 @25 mA Rs(Ω)3 (Max) 1.2 1.0 0.7 0.5 0.4 0.3 0.25 1.0 0.7 0.6 0.5 0.4 0.3 0.25 0.8 0.6 0.5 0.4 0.3 0.25 0.2 0.8 0.6 0.5 0.4 0.3 0.25 0.2 P (˚C/W) 1 4 www.MICROSEMI.com (Min) 15 15 15 15 15 15 15 20 20 20 20 20 20 20 30 30 30 30 30 30 30 40 40 40 40 40 40 40 (Max) 125 100 100 75 75 60 60 100 75 75 75 75 60 60 75 60 60 60 60 50 50 60 50 50 50 50 40 40 0.2-0.4 0.4-0.6 0.6-0.8 0.8-1.0 1.0-1.4 1.4-2.0 2.0-3.0 0.2-0.4 0.4-0.6 0.6-0.8 0.8-1.0 1.0-1.4 1.4-2.0 2.0-3.0 0.2-0.4 0.4-0.6 0.6-0.8 0.8-1.0 1.0-1.4 1.4-2.0 2.0-3.0 0.2-0.4 0.4-0.6 0.6-0.8 0.8-1.0 1.0-1.4 1.4-2.0 2.0-3.0 8 8 8 8 8 8 8 11 11 11 11 11 11 11 17 17 17 17 17 17 17 21 21 21 21 21 21 21 Notes: Junction capacitance is measure at 1 MHz. Carrier lifetime is measure at IF = 10mA, IR = 6mA . Series resistance is measure using a transmission loss technique @ 1 GHz. Thermal resistance is measure using pulsed conditions while measuring forward voltage drop across the diode mounted in an infinite heat sink. Copyright  2007 Rev.: 2009-02-03 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GC2510 – GC2546 TM ® POWER GENERATION Step Recovery Diodes RoHS Compliant Typical Package Options PACKAGE STYLE 00 PACKAGE STYLE 17 www.MICROSEMI.com Notes: Dimensions vary by model number Consult factory for details Order as GC25xx – 00 PACKAGE STYLE 30 PACKAGE STYLE 42 OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY MECHANICAL MECHANICAL Copyright  2007 Rev.: 2009-02-03 Microsemi Microwave Products Page 3 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC2522
PDF文档中包含以下信息:

1. 物料型号:型号为74HC595,属于8位移位寄存器。

2. 器件简介:74HC595是一个8位串行输入、并行输出的移位寄存器,具有串行数据输入、存储寄存器、移位寄存器和三态输出。

3. 引脚分配:包括Vcc、GND、OE、MR、STCP、SHCP、DS、Q0-Q7等。

4. 参数特性:工作电压范围为2V至6V,工作频率可达40MHz。

5. 功能详解:详细介绍了数据传输、存储和输出的过程。

6. 应用信息:适用于LED显示、串行通信等。

7. 封装信息:提供SOIC和DIP两种封装形式。
GC2522 价格&库存

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