GC4600

GC4600 – GC4605 TM ® CONTROL DEVICES High Power PIN Diodes RoHS Compliant DESCRIPTION The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices. This series of devices meets RoHS requirements per EU Directive 2002/95/EC. KEY FEATURES  Kilowatt Power Handling  2.5 KV Breakdown Voltage  Low Loss, Low Distortion through UHF Band  Very Low Thermal Impedance for High Power Dissipation  Non Magnetic Packaging available  Surface Mount and Insulated Stud Packages  RoHS Compliant 1 1 www.MICROSEMI.com APPLICATIONS High power PIN diodes are designed as switching elements with frequencies through UHF band. Applications for these devices include antenna coupler, high power filter switches and Magnetic Resonance Imaging (MRI) switches. These devices are designed to withstand very large CW and pulse power environments where CW and peak RF voltages are in the kilovolt range and are offered in rugged low thermal impedance, stud and insulated stud packages. Most of our devices are supplied with Gold plated terminations. Other terminal finishes are available on request. Consult factory for details. APPLICATIONS/BENEFITS  Kilowatt Switching  Transfer Switched  MRI T/R Switching  Power Attenuators ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Maximum Leakage Current @80% of Minimum Rated VB Storage Temperature Operating Temperature Symbol IR TSTG TOP Value 1.0 -65 to +150 -55 to +125 Unit uA GC4600-GC4605 GC4600-GC4605 ºC ºC For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. Copyright  2007 Rev.: 2009-01-19 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GC4600 – GC4605 TM ® CONTROL DEVICES High Power PIN Diodes RoHS Compliant ELECTRICAL CHARACTERISTICS AT 25 ˚C VB (V) CJ (pF)1 IR=10uA VR =50V Model Number (Min) (Max) GC4600 GC4601 GC4602 GC4603 GC4604 GC4605 1500 1500 2000 2000 2500 2500 0.75 1.5 1 2 2 3 RS(Ohms)2 500 mA, 100 mHz TL(uS) IF=10 mA (Typ) 5 8 10 15 20 25 P(˚C/W) THERMAL RESISTANCE (Max) 5 4 3 3 2 1 www.MICROSEMI.com (Max) 0.3 0.25 0.25 0.2 0.2 0.15 Notes 1. Capacitance is measured at 1 MHz and -50 volts. 2. Resistance is measured using transmission loss techniques using a 30 style package. 3. These devices are not available in all case styles. Please consult the factory for specific package styles offered. TYPICAL RS CURVES TYPICAL CV CURVES ELECTRICAL ELECTRICAL Copyright  2007 Rev.: 2009-01-19 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GC4600 – GC4605 TM ® CONTROL DEVICES High Power PIN Diodes RoHS Compliant PACKAGE STYLE 171 PACKAGE STYLE 172 www.MICROSEMI.com PACKAGE STYLE 173 OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY MECHANICAL MECHANICAL Copyright  2007 Rev.: 2009-01-19 Microsemi Microwave Products Page 3 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 G G