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GC9984

GC9984

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    GC9984 - Schottky Barrier Diodes TM Ultra High Drive Monolithic - Microsemi Corporation

  • 数据手册
  • 价格&库存
GC9984 数据手册
GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights. Diodes are available with barrier heights ranging from 600 mV to 1300 mV per leg. By optimizing epitaxy and metallization, these devices achieve lowest Rs-Cj products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets RoHS requirements per EU Directive 2002/95/EC. KEY FEATURES  Monolithic Design for Lowest Parasitics and Matched Junction Characteristics  Low Noise Figure  Suitable for Applications to 26.5 GHz  Excellent Conversion Loss  Available High and Ultra-High Barrier Heights  Can be Supplied as Monolithic Devices for Hybrid Applications or as Packaged Devices  RoHS Compliant1 These devices are supplied with Gold plated terminations. Consult factory for details. 1 www.MICROSEMI.com APPLICATIONS Schottky Barrier diodes are suitable for a variety of circuit applications ranging from double balanced RF mixers to high speed switching and modulation. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through Ka band. With junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are ideally suited for broad band high drive mixers through 26.5 GHz. Ultra-High barrier diodes, (GC9980 Series) are designed for applications where high drive levels are available, such as, Doppler mixers or motion detection. Microsemi also has Schottky diodes available in Ultra-Low, Medium and High Drive levels to fit virtually any circuit requirement. APPLICATIONS/BENEFITS  RF Mixers  Double Balanced Mixers  High Speed Switching  Motion Detection  Phase Detectors ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Maximum Power Handling Storage Temperature Operating Temperature Symbol P TSTG TOP Value 100 -65 to +175 -65 to +150 Unit mW ºC ºC GC9981-GG9989 GC9981-GG9989 IMPORTANT: For the most current data, consult our web site: www.microsemi.com Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled use using ESD precautions. Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant . CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) NFSSB VB(V) 2 CJ(pF)3 VF(mV) RD(Ω) 4 Model Barrier Freq (db) IR=10μA @0V @1 mA @10 mA Number Height Range (Min) (Max) (Max) (Max) (Typ) 1 www.MICROSEMI.com GC9981 GC9982 GC9983 GC9984 GC9985 GC9986 GC9987 GC9988 GC9989 VERY HIGH EXTRA HIGH ULTRA HIGH Ku-Ka X C Ku-Ka X C Ku-Ka X C 4.0 5.0 6.0 0.08 0.12 0.15 0.08 0.12 0.15 0.08 0.12 0.15 800 780 750 1050 1000 950 1300 1250 1200 25 20 15 25 20 15 25 20 15 7 6.5 6.5 7 6.5 6.5 7 6.5 6.5 Notes 1. When ordering, specify appropriate package style. IE: Order GC9981-8JR for Monolithic 8 Junction Ring Quad. 2. VB measured at 10µA on a sample basis only for ring quads. 3. 0 Volts, F=1 MHz (diagonal leads on quads). 4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz or 3 GHz PACKAGE STYLE 8JR PACKAGE STYLE 8JB PACKAGE STYLE 129C PACKAGE STYLE 174C GC9981-GG9989 GC9981-GG9989 MORE PACKAGE STYLE AVAILABLE ON REQUEST Copyright  2007 Rev: 2009-01-19 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9984 价格&库存

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