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HS12510_11

HS12510_11

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    HS12510_11 - 120 Amp Schottky ORing Rectifier - Microsemi Corporation

  • 数据手册
  • 价格&库存
HS12510_11 数据手册
120 Amp Schottky OR'ing Rectifier HS12510-HS12515 D B Std. Polarity Base is cathode Rev. Polarity Base is anode Dim. Inches A B C D E F G H J K L 1.52 .725 .605 1.182 .745 .152 .525 .156 .495 .120 38.61 1.56 18.42 .775 15.37 .625 30.02 1.192 18.92 .755 3.86 .160 1/4-20 UNC-2B 13.34 .580 3.96 .160 12.57 .505 3.05 .130 G J Millimeter Minimum Maximum Minimum Maximum Notes 39.62 19.69 15.88 30.28 19.18 4.06 14.73 4.06 12.83 3.30 K H E F C Sq. Dia. Dia. A L HALF-PAK Schottky Barrier Rectifier Guard Ring Protection Low Forward Voltage 125°C Junction Temperature VRRM 10-15 Volts Reverse Energy Tested ROHS Compliant Microsemi Catalog Number HS12510* HS12515* Industry Part Number Working Peak Repetitive Peak Reverse Voltage Reverse Voltage 10V 15V 10V 15V 125NQ015 * Add suffix R for Reverse Polarity Electrical Characteristics Average forward current Maximum surge current Maximum repetitive reverse current Max peak forward voltage Max peak reverse current Max peak reverse current Typical junction capacitance I F(AV) I FSM I R(OV) VFM I RM I RM CJ 120 Amps 2000 Amps 2 Amps 0.45 Volts 1 Amp 8mA 9500pF TC = 93°C, square wave, R0JC = 0.4°C/W 8.3ms, half sine, T J = 125°C f = 1 KHZ, 1µs square wave, TJ = 25°C I FM = 120A: T J = 25°C* VRRM, T J = 125°C* VRRM, T J = 25°C VR = 5.0V, T C = 25°C, f = 1MHz *Pulse test: Pulse width 300µsec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temp range Operating junction temp range Max thermal resistance Typical thermal resistance (greased) Mounting Base Torque Terminal Torque Weight T STG TJ R OJC R OCS -55°C to 175°C -55°C to 125°C 0.4°C/W junction to case 0.12°C/W case to sink 15-25 inch pounds 20-40 inch pounds 1.1 ounces (32 grams) typical www.microsemi.com January, 2011 - Rev. 5 HS12510-HS12515 Figure 1 Typical Forward Characteristics 1000 800 600 Junction Capacitance - pF 400 Figure 3 Typical Junction Capacitance 100000 80000 40000 20000 10000 6000 4000 2000 1000 .1 200 100 80 60 100 C 25 C .2 .5 1 2 5 10 20 50 100 Reverse Voltage - Volts 40 Maximum Allowable Case Temperature - C Figure 4 Forward Current Derating 140 130 120 110 100 90 80 70 0 90 15 30 45 60 75 120 90 180 DC Instantaneous Forward Current - Amperes 20 10 8.0 6.0 4.0 2.0 105 120 135 150 1.0 0 .2 .4 .6 .8 1.0 Instantaneous Forward Voltage - Volts Average Forward Current - Amperes 1.2 1.4 Figure 5 Maximum Forward Power Dissipation Maximum Power Dissipation - Watts 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 135 150 Average Forward Current - Amperes 90 120 180 Figure 2 Typical Reverse Characteristics 10000 Typical Reverse Current -mAmperes 1000 125 C 100 100 C DC 10 75 C 50 C 1.0 .1 0 2 4 6 8 10 12 14 16 18 20 Reverse Voltage - Volts 25 C www.microsemi.com January, 2011 - Rev. 5
HS12510_11 价格&库存

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