JAN1N4148UR-1

1N4148UR-1 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Glass MELF Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This popular 1N4148UR-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. Previously listed as a CDLL4148 this small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. DO-213AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of popular JEDEC registered 1N4148 number. • Hermetically sealed glass construction. Also available in: • Metallurgically bonded. • Double plug construction. • Very low capacitance. • Very fast switching speeds with minimal reverse recovery times. UB package • JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116. (surface mount) 1N4148UB • RoHS compliant version available (commercial grade only). DO-35 package (axial-leaded) 1N4148-1 (See part nomenclature for all available options.) UB2 package (2-Pin surface mount) 1N4148UB2 APPLICATIONS / BENEFITS • • • • • • • High frequency data lines. Small size for high density mounting using the surface mount method (see package illustration). RS-232 & RS–422 interface networks. Ethernet 10 Base T. Low capacitance steering or blocking. LAN. Computers. UBC package (Ceramic Lid surface mount) 1N4148UBC MAXIMUM RATINGS @ 25 ºC Parameters/Test Conditions Symbol TJ & TSTG RӨJA RӨJEC Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient (2) Thermal Resistance Junction-to-Endcap Maximum Breakdown Voltage Working Peak Reverse Voltage (3) Average Rectified Current @ TA = 75 ºC Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms) V(BR) VRWM IO IFSM Value -65 to +175 325 100 100 Unit o C o C/W o C/W V 75 200 2 V mA A (pk) NOTES: 1. TA = +75°C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); RӨJA with a defined PCB thermal resistance condition included, is measured at IO = 200 mA dc. 2. See Figure 2 for thermal impedance curves. 3. See Figure 1 for derating. T4-LDS-0281-1, Rev. 1 (121567) ©2012 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 4 1N4148UR-1 MECHANICAL and PACKAGING • • • • • • • • CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4148 UR -1 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant See 1N6642US for JANS level Blank = Commercial grade Metallurgically Bonded JEDEC type number (see Electrical Characteristics table) MELF Surface Mount SYMBOLS & DEFINITIONS Definition Symbol IR IO trr VF VR VRWM Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value). Reverse Voltage: The reverse voltage dc value, no alternating component. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted FORWARD FORWARD REVERSE FORWARD VOLTAGE VOLTAGE RECOVERY RECOVERY VF2 @ TIME VF1 @ TIME trr tfr IF=10 mA IF=100 mA (Note 1) (Note 2) V V ns ns 0.8 1.2 5 20 NOTE 1: IF = IR = 10 mA, RL = 100 Ohms. NOTE 2: IF = 50 mA. T4-LDS-0281-1, Rev. 1 (121567) REVERSE CURRENT IR4 @ 75 V TA=150oC µA CAPACITANCE C (Note 3) CAPACITANCE C (Note 4) µA REVERSE CURRENT IR3 @ 20 V TA=150oC µA pF pF 0.5 35 75 4.0 2.8 REVERSE CURRENT IR1 @ 20 V REVERSE CURRENT IR2 @ 75 V nA 25 NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk). NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk). ©2012 Microsemi Corporation Page 2 of 4 1N4148UR-1 DC Operation Maximum Io Rating (mA) GRAPHS TA (ºC) (Ambient) Theta (°C/W) FIGURE 1 – Temperature – Current Derating Time (s) FIGURE 2 – Thermal Impedance T4-LDS-0281-1, Rev. 1 (121567) ©2012 Microsemi Corporation Page 3 of 4 1N4148UR-1 PACKAGE DIMENSIONS DIM BD BL ECT S INCH MIN MAX 0.063 0.067 0.130 0.146 0.016 0.022 .001 min MILLIMETERS MIN MAX 1.60 1.70 3.30 3.71 0.41 0.56 0.03 min NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimensions are pre-solder dip. 3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT A B C T4-LDS-0281-1, Rev. 1 (121567) ©2012 Microsemi Corporation INCH .200 .055 .080 mm 5.08 1.40 2.03 Page 4 of 4