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JAN1N4476US

JAN1N4476US

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    MELF

  • 描述:

    DIODEZENER30V1.5WD-5A

  • 详情介绍
  • 数据手册
  • 价格&库存
JAN1N4476US 数据手册
1N4460US – 1N4496US and 1N6485US – 1N6491US Available on commercial versions VOIDLESS HERMETICALLY SEALED SURFACE MOUNT 1.5 WATT GLASS ZENER DIODES Qualified per MIL-PRF-19500/406 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This surface mount, Zener voltage regulator series is military qualified to MIL-PRF-19500/406 and is ideal for high-reliability applications where a failure cannot be tolerated. These industryrecognized 1.5 watt Zener voltage regulators are hermetically sealed with void-less glass construction using an internal metallurgical bond. It includes Zener selections from 3.3 to 200 volts in standard 5% tolerance. 1% and 2% tolerance versions are also available. Microsemi also offers numerous other Zener products to meet higher and lower power ratings in both thru-hole and surface mount packages. “A” (D-5A) MELF Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • Surface mount equivalent of popular JEDEC registered series. Void-less hermetically sealed glass package. Triple-layer passivation. Extremely robust construction. Internal “Category 1” metallurgical bonds for 1N4462US thru 1N4496US and “Category III” for 1N6485US thru 1N6491US as well as 1N4460US and 1N4461US. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/406. RoHS compliant versions available (commercial grade only). Also available in: DO-41 Package (axial-lead) 1N4460 – 1N4496 and 1N6485 – 1N6491 APPLICATIONS / BENEFITS • • • • • • Regulates voltage over a broad operating current and temperature range. Extensive selection from 3.3 to 200 V. Standard voltage tolerances are plus/minus 5% with no suffix. Tighter tolerances available in plus or minus 2% or 1%. Non-sensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi MicroNote 050. o MAXIMUM RATINGS @ T A = 25 C unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Steady State Power Dissipation @ TA = 25 ºC Thermal Resistance Junction-to-End Cap 1N4462 – 1N4496 Thermal Impedance @ 10 ms 1N6485 – 1N6491 1N4460 – 1N4461 Forward Voltage @ 200 mA @ 1.0 A Solder Temperature @ 10 s Symbol Value TJ & TSTG PD R ӨJEC Z ӨJX -65 to +175 1.5 20 Figure 3 Figure 4 Figure 4 1.0 1.5 260 VF TSP Unit o C W o C/W ºC/W V o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 1 of 6 1N4460US – 1N4496US and 1N6485US – 1N6491US MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over copper. MARKING: Polarity band only. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: 193 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4460 US C (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Tolerance Level Blank = 5 % C=2% D = 1% JEDEC type number (See Electrical Characteristics table) MELF Surface Mount SYMBOLS & DEFINITIONS Definition Symbol VZ I Z , I ZT , I ZK Z ZT or Z ZK VF IR I ZM I ZSM Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region. Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ). Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form. T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 2 of 6 1N4460US – 1N4496US and 1N6485US – 1N6491US ELECTRICAL CHARACTERISTICS @ 25 ºC Case temperature TYPE NOMINAL ZENER VOLTAGE VZ 1N4460US 1N4461US 1N4462US 1N4463US 1N4464US 1N4465US 1N4466US 1N4467US 1N4468US 1N4469US 1N4470US 1N4471US 1N4472US 1N4473US 1N4474US 1N4475US 1N4476US 1N4477US 1N4478US 1N4479US 1N4480US 1N4481US 1N4482US 1N4483US 1N4484US 1N4485US 1N4486US 1N4487US 1N4488US 1N4489US 1N4490US 1N4491US 1N4492US 1N4493US 1N4494US 1N4495US 1N4496US 1N6485US 1N6486US 1N6487US 1N6488US 1N6489US 1N6490US 1N6491US Volts 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 110.0 120.0 130.0 150.0 160.0 180.0 200.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 NOTE: TEST MAXIMUM CURRENT DYNAMIC IMPEDANCE I ZT Z ZT @ I ZT mA 40.0 37.0 34.0 31.0 28.0 25.0 23.0 21.0 19.0 17.0 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 2.3 2.0 1.9 1.7 1.6 1.4 1.2 76.0 69.0 64.0 58.0 53.0 49.0 45.0 Ohms 4 2.5 2.5 3 4 5 6 7 8 9 10 11 12 14 16 18 20 25 27 30 40 50 60 70 80 100 130 160 200 250 300 400 500 700 1000 1300 1500 10 10 9 9 8 7 5 MAXIMUM KNEE IMPEDANCE Z ZK @ I ZK Ohms 200 200 400 400 500 500 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 4000 4500 5000 6000 6500 7000 8000 400 400 400 400 500 500 600 mA 1.0 1.0 .5 .5 .5 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM REVERSE CURRENT IR @ V R µA 10.0 5.0 1.0 .50 .30 .30 .30 .20 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .05 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 .25 50 50 35 5.0 4.0 1.0 0.5 Volts 3.72 4.08 4.50 4.92 5.46 8.00 8.80 9.60 10.4 12.0 12.8 14.4 16.0 17.6 19.2 21.6 24.0 26.4 28.8 31.2 34.4 37.6 40.8 44.8 49.6 54.4 60.0 65.6 72.8 80.0 88.0 96.0 104.0 120.0 128.0 144.0 160.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 MAXIMUM CONTINUOUS CURRENT I ZM (Note 1) mA 230 210 191 174 157 143 130 119 110 95 90 79 71 65 60 53 48 43 40 37 33 30 28 26 23 21 19 17 16 14 13 12 11 9.5 8.9 7.9 7.2 433 397 366 332 304 280 255 SURGE CURRENT @ 8.3 ms square wave I ZSM Amps 2.3 2.1 1.9 1.7 1.6 1.4 1.3 1.2 1.1 .95 .90 .79 .71 .65 .60 .53 .48 .43 .40 .37 .33 .30 .28 .26 .23 .21 .19 .17 .16 .14 .13 .12 .11 .095 .089 .079 .072 4.2 3.9 3.6 3.3 3.0 2.7 2.5 1. See “Maximum Ratings” for P D temperature conditions for end-cap package where I ZM is applicable. T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 3 of 6 1N4460US – 1N4496US and 1N6485US – 1N6491US ZENER VOLTAGE GRAPHS TEMPERATURE COEFFICIENT (%/°C) DC Operation Maximum Rating (W) FIGURE 1 Temperature Coefficient Characteristics T EC (°C) (End Cap) FIGURE 2 Temperature-Power Derating Curve T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 4 of 6 1N4460US – 1N4496US and 1N6485US – 1N6491US ZθJX-(°C/W) GRAPHS (continued) t H (Heating time) ms ZθJX-(°C/W) FIGURE 3 Thermal Impedance Curve for 1N4462US through 1N4496US t H (Heating time) ms FIGURE 4 Thermal Impedance Curve for 1N6485US through 1N6491US and 1N4460US through 1N4461US T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 5 of 6 1N4460US – 1N4496US and 1N6485US – 1N6491US PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Ltr BD BL ECT S DIMENSIONS INCH MILLIMETERS Min Max Min Max .091 .103 2.31 2.62 .168 .200 4.28 5.08 .019 .028 0.48 0.71 .003 0.08 PAD LAYOUT DIM A B C INCH 0.288 0.070 0.155 MILLIMETERS 7.32 1.78 3.94 NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-0183-1, Rev. 1 (120901) ©2012 Microsemi Corporation Page 6 of 6
JAN1N4476US
物料型号:1N4460US至1N4496US和1N6485US至1N6491US

器件简介:这些齐纳二极管是军用级别,符合MIL-PRF-19500/406标准,适用于高可靠性应用,采用无空洞玻璃封装和内部冶金键合。提供从3.3伏到200伏的标准5%容差齐纳电压选择,也提供1%和2%容差版本。

引脚分配:文档中未明确列出引脚分配,但提到了表面安装和MELF封装两种形式。

参数特性: - 工作温度范围:-65°C至+175°C - 稳态功率耗散:1.5瓦特 - 热阻(结到端盖):20°C/W - 正向电压:在200mA和1.0A测试条件下分别为1.0V和1.5V - 焊接温度:260°C,10秒

功能详解:这些齐纳二极管能够在广泛的工作电流和温度范围内调节电压,具有从3.3V到200V的广泛选择,并且对静电放电不敏感。

应用信息:适用于需要电压调节的场合,具有广泛的电压选择和标准电压容差。

封装信息:包括密封的无空洞硬玻璃封装,带有钨块。端子材料为锡/铅或符合RoHS标准的商业等级的铜上覆盖物。
JAN1N4476US 价格&库存

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