JAN1N6631U

1N6626US thru 1N6631US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • • APPLICATIONS / BENEFITS Surface mount series equivalent to the JEDEC registered 1N6626 to 1N6631 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, and JANTXV available per MIL-PRF19500/590 Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6626US, SP6629US, etc. Axial-leaded equivalents also available (see separate data sheet for 1N6626 thru 1N6631) • • • • • • • • • • • • • • MECHANICAL AND PACKAGING o Junction Temperature: -65 C to +150 C Storage Temperature: -65oC to +175oC Peak Forward Surge Current @ 25oC: 75A (except 1N6631 which is 60A) Note: Test pulse = 8.3ms, half-sine wave. o Average Rectified Forward Current (IO) at TEC = +110 C: 1N6626US thru 1N6628US 2.3 A 1N6629US thru 1N6631US 1.8 A (Derate linearly at 2.5%/oC for TEC > +110oC) Average Rectified Forward Current (IO) at TA=25oC: 1N6626US thru 1N6628US 1.75 A 1N6629US thru 1N6631US 1.40 A (Derate linearly at 0.80%/ oC for TA>+25oC. This IO rating is for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded. See latest issue of MIL-PRF-19500/590) o Thermal Resistance junction to endcap (RθJEC): 6.5 C/W Capacitance at VR= 10 V: 40 pF o Solder temperature: 260 C for 10 s (maximum) Copyright © 2009 10-30-2009 REV G, SD53A • • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead finish. MARKING: Cathode band only POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-481-B Weight: 539 mg See package dimensions and recommended pad layout on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6626US – 1N6631US • Ultrafast recovery rectifier series 200 to 1000 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS o Package “E” or D-5B WWW . Microsemi .C OM DESCRIPTION 1N6626US thru 1N6631US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE VR IR = 50 μA 1N6626US 1N6627US 1N6628US 1N6629US 1N6630US 1N6631US V 220 440 660 880 990 1100 MAXIMUM FORWARD VOLTAGE VF @ IF V@A 1.35V @ 2.0 A 1.35V @ 2.0 A 1.35V @ 2.0 A 1.40V @ 1.4 A 1.40V @ 1.4 A 1.60V @ 1.4 A WORKING PEAK REVERSE VOLTAGE VRWM V@A 1.50V @ 4.0 A 1.50V @ 4.0 A 1.50V @ 4.0 A 1.70V @ 3.0 A 1.70V @ 3.0 A 1.95V @ 2.0 A V 200 400 600 800 900 1000 MAXIMUM REVERSE CURRENT IR @ VRWM TA=25oC TA=150oC μA 2.0 2.0 2.0 2.0 2.0 4.0 μA 500 500 500 500 500 600 MAXIMUM REVERSE RECOVERY TIME (LOW CURRENT) trr Note 1 MAXIMUM REVERSE RECOVERY TIME (HIGH CURRENT) trr Note 2 PEAK RECOVERY CURRENT IRM (rec) IF = 2 A, 100 A/μs Note 2 FORWARD RECOVERY VOLTAGE VFRM Max IF = 0.5 A tr = 12 ns ns 30 30 30 50 50 60 ns 45 45 45 60 60 80 A 3.5 3.5 3.5 4.2 4.2 5.0 V 8 8 8 12 12 20 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ 25oC NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031, Condition D. SYMBOLS & DEFINITIONS Definition Symbol VBR VRWM VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. CHARTS AND GRAPHS Copyright © 2009 10-30-2009 REV G, SD53A 1N6626US – 1N6631US FIGURE 1 Typical Forward Current vs Forward Voltage FIGURE 2 Typical Forward Current vs Forward Voltage Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6626US thru 1N6631US SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM FIGURE 3 Typical Reverse Current vs. Applied Reverse Voltage FIGURE 4 Typical Reverse Current vs. Applied Reverse Voltage 1N6626US – 1N6631US 10ms FIGURE 5 Forward Pulse Current vs. Pulse Duration Copyright © 2009 10-30-2009 REV G, SD53A FIGURE 6 Reverse Pulse Power vs. Pulse Duration Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 1N6626US thru 1N6631US SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS NOTE: This Package Outline has also previously been identified as “D-5B” WWW . Microsemi .C OM PACKAGE DIMENSIONS AND PAD LAYOUT PAD LAYOUT INCHES INCHES BL mm MIN MAX MIN MAX .200 .225 5.08 5.72 BD .137 .148 3.48 3.76 ECT .019 .028 0.48 0.711 S .003 --- 0.08 --- mm A 0.288 7.32 B 0.070 1.78 C 0.155 3.94 Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. 1N6626US – 1N6631US Copyright © 2009 10-30-2009 REV G, SD53A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4