JAN2N2326

TECHNICAL DATA SILICON CONTROLLED RECTIFIER Qualified per MIL-PRF-19500/276 Devices Qualified Level 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS JAN JANTX JANTXV 2N2329 2N2329S MAXIMUM RATINGS Ratings Sym 2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/ 2N2329,S Unit 2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S Reverse Voltage VRM 50 100 200 300 400 Vdc Working Peak Reverse Voltage VRM 75 150 300 400 500 Vpk Forward Blocking Voltage VFBXM 50(3/4) 100(3/4) 200(3/4) 300(3/4) 400(3) Vpk (1) Average Forward Current IO 0.22 Adc Forward Current Surge Peak(2) IFSM 15 Adc Cathode-Gate Current VKGM 6 Vpk 0 Operating Temperature Top -65 to +125 C 0 Storage Junction Temp Tstg -65 to +150 C 1) This average forward current is for an ambient temperature of 800C and 180 electrical degrees of conduction. 2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial blocking value. 3) Gate connected to cathode through 1,000 ohm resistor. 4) Gate connected to cathode through 2,000 ohm resistor. TO-5 *See appendix A for package outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit 10 µAdc SUBGROUP 2 TESTING Reverse Blocking Current R2 = 1 kµ R2 = 2 kµ VR = 50 Vdc VR = 100 Vdc VR = 200 Vdc VR = 300 Vdc VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS 2N2323, S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS 2N2328, S, A, AS 2N2329, S, 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 IRBX1 120101 Page 1 of 2 2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Forward Blocking Current R2 = 1 kΩ R2 = 2 kΩ VR = 50 Vdc VR = 100 Vdc VR = 200 Vdc VR = 300 Vdc VR = 400 Vdc Reverse Gate Current VKG = 6 Vdc Gate Trigger Voltage and Current V2 = VFBX = 6 Vdc; RL = 100 Ω Re = 1 kΩ Re = 2 kΩ 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS 2N2323, S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS 2N2328, S, A, AS 2N2329, S 2N2323 thru 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS Symbol Max. Unit IFBX1 10 µAdc IKG 200 µAdc 0.80 200 0.60 20 Vdc µAdc Vdc µAdc VGT1 IGT1 VGT1 IGT1 Min. 0.35 0.35 SUBGROUP 4 TESTING Exponential Rate of Voltage Rise TA = 1250C 50 Ω ≤ RL ≤ 400 Ω, C = 0.1 to 1.0 µF, repetition rate = 60 pps, test duration = 15 seconds dv/dt = 1.8 v/µs, R3 = 1 kΩ 2N2323 thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 kΩ 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS VAA = 50 Vdc 2N2323, S, A, AS VAA = 100 Vdc 2N2324, S, A, AS VAA = 200 Vdc 2N2326, S, A, AS VAA = 300 Vdc 2N2328, S, A, AS VAA = 400 Vdc 2N2329, S Forward “on” Voltage iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max Holding Current VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc Gate trigger source voltage = 6 Vdc, trigger pulse width = 25 µs min., R2 = 330 Ω R3 = 1 kΩ 2N2323 thru 2N2329 and 2N2323S thru 2N2329S R3 = 2 kΩ 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc VFBX 47 95 190 285 380 VFM 2.2 V(pk) IHOX 2.0 mAdc 120101 Page 2 of 2