JAN2N4957

2N4957 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957 is a military qualified silicon PNP amplifier transistor designed for VHF-UHF equipment and other high-reliability applications. Common applications include high gain low noise amplifier; oscillator, and mixer applications. It is also available in a low-profile UB surface mount package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N4957 • JAN, JANTX, and JANTXV military qualified versions are available per MIL-PRF-19500/426 (See part nomenclature for all available options) • RoHS compliant version available (commercial grade only) TO-72 Package Also available in: UB Package (surface mount) 2N4957UB APPLICATIONS / BENEFITS • • Low-power, ultra-high frequency transistor Leaded metal TO-72 package o MAXIMUM RATINGS @ TA = +25 C Parameters/Test Conditions Junction and Storage Temperature Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (1) Total Power Dissipation Collector Current Symbol Value TJ and TSTG V CEO V CBO V EBO PT IC -65 to +200 -30 -30 -3 200 -30 Unit o C V V V mW mA MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 Notes: 1. Derate linearly 1.14 mW/°C for T A > +25 °C MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 1 of 4 2N4957 MECHANICAL and PACKAGING • • • • • • CASE: Ni plated kovar, Ni cap TERMINALS: Gold over nickel plated kovar leads, solder dipped. RoHS compliant versions are available without solder dip on commercial grade only. MARKING: Manufacturer’s ID, date code, part number POLARITY: PNP, see case outline on last page WEIGHT: Approximately 0.322 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N4957 (e3) Reliability Level JAN=JAN level JANTX=JAN level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IB IC IE TA TC V CB V CBO V CEO V EB V EBO Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Emitter current: The value of the dc current into the emitter terminal. Ambient temperature: The air temperature measured below a device, in an environment of substantially uniform temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces. Case temperature: The temperature measured at a specified location on the case of a device. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 2 of 4 2N4957 ELECTRICAL CHARACTERISTICS @ TC = +25oC OFF CHARACTERISTICS Test Conditions Symbol Collector-Emitter Breakdown Voltage I C = -1.0 mA, I B = 0, Bias condition D Collector to Base Cutoff Current V CB = -20 V, I E = 0, Bias condition D V CB = -30 V, Bias condition D Emitter to Base Cutoff Current V EB = -3 V, Bias condition D Value Min. Max. Unit V (BR)CEO -30 - V I CBO - -100 -100 nA µA I EBO - -100 µA Min. Max. Unit 15 20 30 10 165 ON CHARACTERISTICS Test Conditions Symbol Forward Current transfer ratio I C = -0.5 mA, V CE = -10 V I C = -2.0 mA, V CE = -10 V I C = -5.0 mA, V CE = -10 V I C = -5.0 mA, V CE = -10 V, TA = -55 ºC h FE Value DYNAMIC CHARACTERISTICS Test Conditions Symbol Magnitude of common emitter small signal short circuit forward current transfer ratio V CE = -10 V, I E = -2.0 mA, f = 100 MHz Value Unit Min. Max. |h fe | 12 36 Collector-base time constant I E = -2.0 mA, V CB = -10.0 V, f = 63.6 MHz r b ’C c 1.0 8.0 ps Collector to Base – feedback capacitance I E = 0 mA, V CB = -10 V, 100 kHz < f < 1 MHz C cb 0.8 pF Noise Figure (50 Ohms) I C = -2.0 mA, V CE = -10 V, f = 450 MHz, R L = 50 Ω NF 3.5 dB Small Signal Power Gain (common emitter) I C = -2.0 mA, V CE = -10 V, f = 450 MHz G pe 25 dB T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation 17 Page 3 of 4 2N4957 PACKAGE DIMENSIONS Ltr TL TH HD CD LD LC CH LL P Q 1 2 3 4 Dimensions Inch Millimeters Min Max Min Max 0.028 0.048 0.071 1.22 0.036 0.046 0.091 1.17 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.016 0.021 0.410 0.53 0.100 TP 2.54 TP 0.170 0.210 4.32 5.33 0.500 0.750 12.70 19.05 0.100 2.54 0.040 1.02 Notes 5 5 7, 8 7, 8 7, 8 5 Emitter Base Collector Case NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of 0.011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 4 of 4