JANTX1N6642US

1N6638US, 1N6642US, 1N6643US     Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION This popular surface mount equivalent JEDEC registered switching/signal diodes are military qualified and available with internal metallurgical bonded construction. These small low capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a “D-5D” package. They may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes. “D” SQ-MELF (D-5D) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES         JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643. Ultra fast recovery time. Very low capacitance. Metallurgically bonded. Non-cavity glass package. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578. Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR. RoHS compliant devices available (commercial grade only).   Small size for high density mounting (see package illustration). Ideal for: High frequency data lines RS-232 & RS–422 Interface Networks Ethernet: 10 Base T Switching core drivers LAN Computers Also available in: “D” Package (axial-leaded) 1N6638_42_43 APPLICATIONS / BENEFITS MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted. Parameters/Test Conditions Junction and Storage Temp Thermal Resistance Junction-to-End Cap Thermal Resistance Junction-to-Ambient (1) Peak Forward Surge Current @ TA = +25 oC (Test pulse = 8.3 ms, half-sine wave.) Average Rectified Forward Current @ TA = +75 oC (Derate at 4.6 mA/°C Above TEC = + 110 °C) Breakdown Voltage: 1N6638US 1N6642US 1N6643US Working Peak Reverse Voltage: 1N6638US 1N6642US 1N6643US Symbol Value TJ and TSTG RӨJEC RӨJA IFSM -65 to +175 40 250 2.5 IO 300 mA VBR 150 100 75 125 75 50 V VRWM Unit o C C/W o C/W A o V NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); RΘJA with a defined PCB thermal resistance condition included, is measured at IO = 300 mA.   T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) ©2014 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 Tel: (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N6638US, 1N6642US, 1N6643US   MECHANICAL and PACKAGING       CASE: Voidless hermetically sealed hard glass. TERMINALS: Tin-Lead plate with >3% Lead. Solder dip is available upon request. MARKING: Body painted and alpha numeric. POLARITY: Cathode indicated by band. Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6638 US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol VBR VRWM VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise noted. TYPE NUMBER 1N6638US 1N6642US 1N6643US MAXIMUM FORWARD VOLTAGE V F @ IF V @ mA 0.8 V @ 10 mA 0.8 V @ 10 mA 0.8 V @ 10 mA V @ mA 1.1 V @ 200 mA 1.2 V @ 100 mA 1.2 V @ 100 mA MAXIMUM DC REVERSE CURRENT IR1 V R= 20 V IR2 VR=VRWM nA 35 25 50 nA 500 500 500 IR3 VR=20 V TA= o +150 C A 50 50 75 IR4 VR=VRWM TA= o +150 C A 100 100 100 REVERSE RECOVERY TIME trr (Note 1) ns 4.5 5.0 6.0 MAXIMUM FORWARD RECOVERY VOLTAGE AND TIME IF=200mA, tr=1ns MAXIMUM JUNCTION CAPACITANCE f = 1 MHz Vsig = 50 mV (p-p) VFRM tfr VR=0 V VR=1.5 V V 5.0 5.0 5.0 ns 20 20 20 pf 2.5 5.0 5.0 pf 2.0 2.8 2.8 NOTE: 1. Reverse Recovery Time Test Conditions – IF=IR=10 mA, IR(REC) = 1.0 mA, C=3 pF, RL = 100 ohms.   T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) ©2014 Microsemi Corporation Page 2 of 5 1N6638US, 1N6642US, 1N6643US   Sinewave Operation Maximum IO Rating (mA) GRAPHS TA (oC) Ambient Temperature Thermal Impedance (oC/W) FIGURE 1 Temperature – Current Derating Time (s) FIGURE 2 Maximum Thermal Impedance at TA = 55 oC   T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) ©2014 Microsemi Corporation Page 3 of 5 1N N6638US S, 1N664 42US, 1N N6643US S   Thermal Impedance (oC/W) GRAPH HS (continue ed) Time (s) FIGURE F 3 Maxim mum Therma al Impedance at TEC = 25 oC   T4-LD DS-0218-1, Rev. 2 (11/07/14))(111513) ©2014 Microsemi Corporration Page 4 of 5 1N6638US, 1N6642US, 1N6643US   PACKAGE DIMENSIONS D-5D INCH MILLIMETERS DIM MIN MAX MIN MAX BD 0.070 0.085 1.78 2.16 ECT 0.019 0.028 0.48 0.71 BL 0.165 0.195 4.19 4.95 S 0.003 MIN. 0.08 MIN. NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimensions are pre-solder dip. 3. U-suffix parts are structurally identical to the US-suffix parts. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.   T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) ©2014 Microsemi Corporation Page 5 of 5