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JANTX1N943B-1

JANTX1N943B-1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    DIODEZENER12.28V500MWDO35

  • 详情介绍
  • 数据手册
  • 价格&库存
JANTX1N943B-1 数据手册
1N941-1 thru 1N945B-1 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS 11.7 Volt Temperature Compensated Zener Reference Diodes Qualified per MIL-PRF-19500/157 (available on some part numbers) DESCRIPTION The popular 1N941-1 thru 1N945B-1 series of zero-TC reference diodes provides a selection of 11.7 V nominal voltages and temperature coefficients to as low as 0.0002 %/oC for minimal voltage change with temperature when operated at 7.5 mA. The “B” version of these glass, axial-leaded DO-35 reference diodes are also available in JAN, JANTX, JANTXV, and JANS military qualifications. Microsemi also offers numerous other Zener reference diode products for a variety of other voltages from 6.2 V to 200 V. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 1N941 thru 1N945 series. • Standard reference voltage of 11.7 V +/- 5% with tighter reference tolerances of 1%, 2%, and 3% available on commercial level only. Internal metallurgical bond. • • • JAN, JANTX, JANTXV, and JANS qualification per MIL-PRF-19500/157 available for 1N941B-1, 1N943B-1, 1N944B-1, and 1N945B-1. RoHS compliant versions available (commercial grade only). DO-35 (DO-204AH) Package Also available in: DO-213AA (surface mount) 1N941UR-1 thru 1N945BUR-1 APPLICATIONS / BENEFITS • • • • • Provides minimal voltage changes over a broad temperature range. For instrumentation and other circuit designs requiring a stable voltage reference. Maximum temperature coefficient selections available from 0.01 %/ºC to 0.0005 %/ºC. Flexible axial-lead mounting terminals. Non-sensitive to ESD per MIL-STD-750 method 1020. MAXIMUM RATINGS Parameters/Test Conditions o Power Dissipation @ TA = +25 C and maximum (1, 2) current I ZM of 39 mA. Junction and Storage Temp Maximum Zener Current Solder Temperature @ 10 s Symbol Value Unit PD 500 mW TJ and TSTG I ZM TSP -55 to +175 39 260 Notes: 1. For optimum voltage-temperature stability, I Z = 7.5 mA (less than 95 mW in dissipated power). 2. Derate at 3.33 mW/oC above T A = +25 oC. o C mA o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 1 of 6 1N941-1 thru 1N945B-1 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed glass case with axial DO-35 (DO-204AH) package. TERMINALS: Tin-lead plated or RoHS compliant matte-tin plating available (on commercial grade only) and solderable per MILSTD-750, method 2026. MARKING: Part number and cathode band. POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. (Add “TR” suffix to part number.) WEIGHT: 0.2 grams. See Package Dimensions on the last page. PART NOMENCLATURE Applicable to: JAN, JANTX, JANTXV and JANS level 1N941B, 1N943B, 1N944B, and 1N945B only: JAN 1N941 B -1 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Metallurgically Bonded Temperature Coefficient o o range of -55 C to +150 C JEDEC type number (See Electrical Characteristics table) Applicable to: commercial level 1N941 thru 1N945B: 1N941 A -1 -1% (e3) JEDEC type number (See Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Temperature Coefficient range: o o A = -55 C to +100 C o o B = -55 C to +150 C o o Blank = 0 C to +75 C Tighter Reference Tolerance 1% 2% 3% Blank = 5% Metallurgically Bonded LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 2 of 6 1N941-1 thru 1N945B-1 SYMBOLS & DEFINITIONS Definition Symbol IR I Z, I ZT, I ZK I ZM VZ V ZT Z ZT or Z ZK Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (I Z), at a specified test point (I ZT), near breakdown knee (I ZK ). Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z) in its breakdown region. Zener Voltage Temperature. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. ELECTRICAL CHARACTERISTICS @ 25 oC unless otherwise specified JEDEC TYPE NUMBER (Note 4) 1N941-1 1N941A-1 1N941B-1 1N942-1 1N942A-1 1N942B-1 1N943-1 1N943A-1 1N943B-1 1N944-1 1N944A-1 1N944B-1 1N945-1 1N945A-1 1N945B-1 ZENER VOLTAGE V Z @ I ZT (Note 3) ZENER TEST CURRENT I ZT MAXIMUM ZENER IMPEDANCE Z ZT @ I ZT (Note 1) MAXIMUM REVERSE CURRENT IR @ 8 V VOLTAGE TEMPERATURE STABILITY ∆V ZT MAXIMUM (Note 2 & 3) Volts 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 mA 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 Ohms 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 μA 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 mV 88 181 239 44 90 120 18 36 47 9 18 24 4 9 12 TEMPERATURE RANGE o C 0 to +75 -55 to +100 -55 to +150 0 to +75 -55 to +100 -55 to +150 0 to +75 -55 to +100 -55 to +150 0 to +75 -55 to +100 -55 to +150 0 to +75 -55 to +100 -55 to +150 EFFECTIVE TEMPERATURE COEFFICIENT α VZ o %/ C 0.01 0.01 0.01 0.005 0.005 0.005 0.002 0.002 0.002 0.001 0.001 0.001 0.0005 0.0005 0.0005 *JEDEC Registered Data. NOTES: 1. 2. 3. 4. o Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 C. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at any discrete temperature between the established limits. Voltage measurements to be performed 15 seconds after application of dc current. The 1N941B-1, 1N943B-1, 1N944B-1, and 1N945B-1 only are military qualified to MIL-PRF-19500/157 up to the JANS level. LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 3 of 6 1N941-1 thru 1N945B-1 I Z – Operating Current (mA) Change in temperature coefficient (mV/oC) Change in temperature coefficient (%/oC) GRAPHS The curve shown in Figure 1 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 7.5 mA. EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has specified Temperature Coefficient (TC) limits of +/-0.002 %/oC. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 6.0mA, the o new TC limits (%/ C) can be estimated using the graph in Figure 1. At a test current of 6.0 mA the change in Temperature Coefficient (TC) is approximately – o o 0.0009 %. C. The algebraic sum of +/-0.002 % C and –0.0009 %/oC gives the new estimated limits of +0.0011 %/oC and -0.0029 %/oC. ∆VZ – Change in Zener Voltage (mV) FIGURE 1 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT This curve in Figure 2 illustrates the change of diode voltage arising from the effect of impedance. It is in effect, an exploded view of the Zener operating region of the I-V characteristic. In conjunction with Figure 1, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. I Z – Operating Current (mA) FIGURE 2 TYPICAL CHANGE OF ZENER VOLTAGE WITH CHANGE IN OPERATING CURRENT LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 4 of 6 1N941-1 thru 1N945B-1 PD, Rated Power Dissipation (mW) GRAPHS 600 500 400 300 200 100 0 0 25 50 75 100 125 150 T L , Ambient temperature (°C) 175 Zener Impedance ZZT (ohms) FIGURE 3 POWER DERATING CURVE Operating Current l ZT (mA) FIGURE 4 TYPICAL ZENER IMPEDANCE VS. OPERATING CURRENT LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 5 of 6 1N941-1 thru 1N945B-1 PACKAGE DIMENSIONS Symbol BD BL LD LL LL1 Dimensions Inch Millimeters Min Max Min Max 0.600 0.107 1.52 2.72 0.120 0.300 3.05 7.62 0.018 0.023 0.46 0.58 1.000 1.500 25.40 38.10 0.050 1.27 Notes 3 3 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. 4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to ΦX symbology. LDS-0222, Rev. 1 (111515) ©2011 Microsemi Corporation Page 6 of 6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: JANTX1N941B-1 JANTX1N945B-1 JANTX1N944B-1 JAN1N944B-1 JANTX1N943B-1 JANS1N945B-1 JANS1N942B-1 JANS1N943B-1 JANS1N943BUR-1 JANS1N944B-1 JAN1N943B-1 JAN1N945B-1 JAN1N941B-1 JAN1N944B-1/TR JAN1N945B-1/TR JAN1N943B-1/TR JAN1N941B-1/TR JANTX1N945B-1/TR JANS1N941B-1/TR JANS1N943B-1/TR JANS1N944B-1/TR JANS1N945B-1/TR JANTX1N941B-1/TR JANTX1N943B-1/TR JANTX1N944B-1/TR
JANTX1N943B-1
物料型号:1N941-1至1N945B-1

器件简介:这系列的基准二极管提供11.7V的标准电压和低至0.0002%/°C的温度系数,以实现在7.5mA工作电流下温度变化时电压的微小变化。

引脚分配:轴向DO-35(DO-204AH)封装,带有标记的一端为负极。

参数特性: - 工作电流:7.5mA - 最大耗散功率:500mW(25°C时) - 存储和结温范围:-55°C至+175°C - 最大齐纳电流:39mA - 焊接温度:260°C(10秒)

功能详解: - 提供在宽温度范围内最小的电压变化,适用于需要稳定电压参考的仪表和其他电路设计。 - 温度系数选择范围从0.01%/°C至0.0005%/°C。

应用信息: - 用于需要稳定电压参考的仪器和其他电路设计。

封装信息: - 轴向DO-35(DO-204AH)封装,也提供DO-213AA(表面贴装)封装。 - 标记包括部件编号和阴极带。 - 重量:0.2克。
JANTX1N943B-1 价格&库存

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