JANTX2N5415

2N5415U4 – 2N5416U4 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longleaded TO-5, short-leaded TO-39 and low profile UA packaging. U4 Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N5415 through 2N5416 series • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. • Also available in: (See part nomenclature for all available options.) TO-5 package RoHS compliant (long-leaded) 2N5415 – 2N5416 TO-39 (TO-205AD) package (short-leaded) 2N5415S – 2N5416S APPLICATIONS / BENEFITS • • • General purpose transistors for low power applications requiring high frequency switching Low package profile Military and other high-reliability applications UA package (surface mount) 2N5415UA – 2N5416UA MAXIMUM RATINGS @ T A = +25 ºC unless otherwise noted Parameters / Test Conditions Symbol 2N5415U4 2N5416U4 Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R ӨJA 145 o C/W Thermal Resistance Junction-to-Case R ӨJC 12 o C/W PT 1 15 Total Power Dissipation (1) @ T A = +25 °C (2) @ T C = +25 °C Notes: 1. Derate linearly 6.90 mW/°C for TA > +25 °C 2. Derate linearly 86 mW/°C for T C > +25 °C °C W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 1 of 7 2N5415U4 – 2N5416U4 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid TERMINALS: Gold over nickel plated surface mount terminations MARKING: Part number, date code, manufacturer’s ID POLARITY: PNP TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities WEIGHT: Approximately 0.125 grams (125 milligrams) See Package Dimensions on last page. PART NOMENCLATURE JAN 2N5415 U4 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level Blank = Commercial Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO SMD package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 2 of 7 2N5415U4 – 2N5416U4 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 50 mA, I B = 5 mA, L = 25 mH; f = 30 – 60 Hz Emitter-Base Cutoff Current V EB = 6.0 V Collector-Emitter Cutoff Current V CE = 200 V, V BE = 1.5 V V CE = 300 V, V BE = 1.5 V Collector-Emitter Cutoff Current V CE = 150 V V CE = 250 V Collector-Emitter Cutoff Current V CE = 200 V V CE = 300 V Collector-Base Cutoff Current V CB = 175 V V CB = 280 V V CB = 200 V V CB = 350 V V CB = 175 V, T A = +150 ºC V CB = 280 V, T A = +150 ºC 2N5415U4 2N5416U4 Symbol Min. V (BR)CEO 200 300 Max. Unit V I EBO 20 µA 2N5415U4 2N5416U4 I CEX 50 µA 2N5415U4 2N5416U4 I CEO1 50 µA 2N5415U4 2N5416U4 I CEO2 1 mA 2N5415U4 2N5416U4 2N5415U4 2N5416U4 2N5415U4 2N5416U4 I CBO1 50 µA I CBO2 500 µA I CBO3 1 mA Min. Max. Unit 30 15 15 120 ON CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio I C = 50 mA, V CE = 10 V I C = 1 mA, V CE = 10 V I C = 50 mA, V CE = 10 V, T A = +150 ºC Collector-Emitter Saturation Voltage I C = 50 mA, I B = 5 mA Base-Emitter Voltage Non-Saturation I C = 50 mA, V CE = 10 V Symbol h FE V CE(sat) 2.0 V V BE 1.5 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5 MHz Small-signal short Circuit Forward-Current Transfer Ratio I C = 5 mA, V CE = 10 V, f ≤ 1 kHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1 MHz T4-LDS-0305-2, Rev. 1 (7/30/13) Symbol Min. Max. |h fe | 3 15 h fe 25 C obo ©2013 Microsemi Corporation 15 pF Page 3 of 7 2N5415U4 – 2N5416U4 ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time V CC = 200 V, I C = 50 mA, I B1 = 5 mA Turn-Off Time V CC = 200 V, I C = 50 mA, I B1 = I B2 = 5 mA Symbol Min. Max. Unit t on 1 µs t off 10 µs SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = +25 °C, t P = 0.4 s, 1 Cycle Test 1 V CE = 10 V, I C = 1 A Test 2 V CE = 100 V, I C = 100 mA Test 3 V CE = 200 V, I C = 24 mA Test 4 V CE = 300 V, I C = 10 mA See SOA graphs on next page T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 4 of 7 2N5415U4 – 2N5416U4 IC – COLLECTOR CURRENT - A SAFE OPERATING AREA V CE – COLLECTOR – EMITTER VOLTAGE – V IC – COLLECTOR CURRENT - A Maximum Safe Operating Area (T J = 200 ºC, U4 on copper sink T C = 25 ºC) V CE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area (T J = 200 ºC) T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 5 of 7 2N5415U4 – 2N5416U4 o Theta ( C/W) GRAPHS Time (s) FIGURE 1 Thermal impedance graph (R ӨJA ) T4-LDS-0305-2, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 6 of 7 2N5415U4 – 2N5416U4 PACKAGE DIMENSIONS NOTES: 1. 2. 3. Dimensions are in inches. Millimeter equivalents are given for information only. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0305-2, Rev. 1 (7/30/13) BL BW CH LH LW1 LW2 LL1 Min 0.215 0.145 0.049 0.135 0.047 0.085 Dimensions Millimeters Max Min Max 0.225 5.46 5.72 0.155 3.68 3.94 0.075 1.24 1.91 0.02 0.51 0.145 3.43 3.68 0.057 1.19 1.45 0.125 2.16 3.18 LL2 0.045 0.075 1.14 1.91 LS1 0.070 0.095 1.78 2.41 LS2 Q1 Q2 0.035 0.030 0.020 0.048 0.070 0.035 0.89 0.76 0.51 1.22 1.78 0.89 Ltr Inch TERMINAL 1 COLLECTOR 2 3 BASE EMITTER ©2013 Microsemi Corporation Page 7 of 7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: JAN2N5416U4 JAN2N5415U4 JANTX2N5415U4 JANS2N5415U4 JANS2N5416U4/TR JANTXV2N5415U4 JANTXV2N5416U4 JANTXV2N5416U4/TR