JANTX2N6766

2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. TO-204AE (TO-3) Package FEATURES • JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543. (See part nomenclature for all available options.) • Also available in: RoHS compliant versions available (commercial grade only). TO-254AA package (leaded) 2N6764T1 & 2N6770T1 APPLICATIONS / BENEFITS • • Low-profile metal can design. Military and other high-reliability applications. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Symbol Junction & Storage Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Drain-Source Voltage, dc 2N6764 2N6766 2N6768 2N6770 Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N6764 2N6766 2N6768 2N6770 (2) Drain Current, dc @ TC = +100 ºC 2N6764 2N6766 2N6768 2N6770 (3) Off-State Current (Peak Total Value) 2N6764 2N6766 2N6768 2N6770 Source Current 2N6764 2N6766 2N6768 2N6770 TJ & Tstg R ӨJC PT V DS V GS I D1 I D2 I DM IS Value Unit -55 to +150 °C 0.83 4 150 100 200 400 500 ± 20 38.0 30.0 14.0 12.0 24.0 19.0 9.0 7.75 152 120 56 48 38.0 30.0 14.0 12.0 o C/W W V V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 A Website: www.microsemi.com Notes featured on next page. T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 1 of 9 2N6764, 2N6766, 2N6768 and 2N6770 NOTES: 1. 2. Derate linearly by 1.2 W/ºC for T C > +25 ºC. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING • • • • • CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: Manufacturer's ID, part number, date code. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6764 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 2 of 9 2N6764, 2N6766, 2N6768 and 2N6770 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6764 2N6766 2N6768 2N6770 V GS = 0 V, I D = 1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 °C Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V V GS = 0 V, V DS = 400 V Drain Current V GS = 0 V, V DS = 100 V, T J = +125 °C V GS = 0 V, V DS = 200 V, T J = +125 °C V GS = 0 V, V DS = 400 V, T J = +125 °C V GS = 0 V, V DS = 500 V, T J = +125 °C Drain Current V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS = 80 V, T J = +125 °C = 160 V, T J = +125 °C = 320 V, T J = +125 °C = 400 V, T J = +125 °C V (BR)DSS 100 200 400 500 2.0 1.0 Max. Unit V 4.0 V 5.0 I GSS1 I GSS2 ±100 ±200 nA 2N6764 2N6766 2N6768 2N6770 I DSS1 25 µA 2N6764 2N6766 2N6768 2N6770 I DSS2 1.0 mA 2N6764 2N6766 2N6768 2N6770 I DSS3 0.25 mA r DS(on)1 0.055 0.085 0.3 0.4 Ω r DS(on)2 0.065 0.09 0.4 0.5 Ω r DS(on)3 0.094 0.153 0.66 0.88 V SD 1.9 1.9 1.7 1.7 2N6764 2N6766 2N6768 2N6770 Static Drain-Source On-State Resistance V GS = 10 V, I D = 38.0 A pulsed V GS = 10 V, I D = 30.0 A pulsed V GS = 10 V, I D = 14.0 A pulsed V GS = 10 V, I D = 12.0 A pulsed 2N6764 2N6766 2N6768 2N6770 T4-LDS-0101, Rev. 3 (121466) Min. V GS(th)1 V GS(th)2 V GS(th)3 Static Drain-Source On-State Resistance V GS = 10 V, I D = 24.0 A pulsed V GS = 10 V, I D = 19.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 7.75 A pulsed Static Drain-Source On-State Resistance T J = +125 °C V GS = 10 V, I D = 24.0 A pulsed V GS = 10 V, I D = 19.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 7.75 A pulsed Diode Forward Voltage V GS = 0 V, I D = 38.0 A pulsed V GS = 0 V, I D = 30.0 A pulsed V GS = 0 V, I D = 14.0 A pulsed V GS = 0 V, I D = 12.0 A pulsed Symbol 2N6764 2N6766 2N6768 2N6770 2N6764 2N6766 2N6768 2N6770 ©2012 Microsemi Corporation Ω V Page 3 of 9 2N6764, 2N6766, 2N6768 and 2N6770 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = 10 V, I D = 38.0 A, V DS = 50 V V GS = 10 V, I D = 30.0 A, V DS = 100 V V GS = 10 V, I D = 14.0 A, V DS = 200 V V GS = 10 V, I D = 12.0 A, V DS = 250 V Symbol 2N6764 2N6766 2N6768 2N6770 Gate to Source Charge V GS = 10 V, I D = 38.0 A, V DS V GS = 10 V, I D = 30.0 A, V DS V GS = 10 V, I D = 14.0 A, V DS V GS = 10 V, I D = 12.0 A, V DS = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 Gate to Drain Charge V GS = 10 V, I D = 38.0 A, V DS V GS = 10 V, I D = 30.0 A, V DS V GS = 10 V, I D = 14.0 A, V DS V GS = 10 V, I D = 12.0 A, V DS = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 Min. Max. Unit Q g(on) 125 115 110 120 nC Q gs 22 22 18 19 nC Q gd 65 60 65 70 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD Rise time I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD Turn-off delay time I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD Fall time I D = 38.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD Diode Reverse Recovery Time di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D T4-LDS-0101, Rev. 3 (121466) = 38.0 = 30.0 = 14.0 = 12.0 A A A A Symbol Min. = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 t d(on) 35 ns = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 tr 190 ns = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 t d(off) 170 ns = 50 V = 100 V = 200 V = 250 V 2N6764 2N6766 2N6768 2N6770 tf 130 ns t rr 500 950 1200 1600 ns 2N6764 2N6766 2N6768 2N6770 ©2012 Microsemi Corporation Page 4 of 9 2N6764, 2N6766, 2N6768 and 2N6770 Thermal Response (ZθJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 5 of 9 2N6764, 2N6766, 2N6768 and 2N6770 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For 2N6766 ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) T C CASE TEMPERATURE (ºC) For 2N6764 T C CASE TEMPERATURE (ºC) For 2N6768 T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation T C CASE TEMPERATURE (ºC) For 2N6770 Page 6 of 9 2N6764, 2N6766, 2N6768 and 2N6770 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766 T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 7 of 9 2N6764, 2N6766, 2N6768 and 2N6770 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6770 T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 8 of 9 2N6764, 2N6766, 2N6768 and 2N6770 PACKAGE DIMENSIONS NOTE: INCHES DIM 1. Dimensions are in inches. MIN MAX 2. Millimeters are given for general information only. A 0.875 3. These dimensions should be measured at points .050 B 0.060 0.135 inch (1.27 mm) and .055 inch (1.40 mm) below the C 0.250 0.360 seating plane. When gauge is not used measurement D 0.312 0.500 will be made at the seating plane. D2 0.050 4. The seating plane of the header shall be flat within 0.057 0.063 E .001 inch (0.03 mm) concave to .004 inch (0.10 mm) 0.038 0.043 F 0.131 0.188 convex inside a .930 inch (23.62 mm) diameter circle G 1.177 1.197 on the center of the header and flat within .001 inch H 0.655 0.675 (0.03 mm) concave to .006 inch (0.15 mm) convex J 0.205 0.225 overall. K 0.420 0.440 5. These dimensions pertain to the 2N6764 and 2N6766 L 0.495 0.525 types. M 0.151 0.161 6. These dimensions pertain to the 2N6768 and 2N6770 types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. MILLIMETERS MIN MAX 22.23 1.52 3.43 6.35 9.15 7.92 12.70 1.27 1.45 1.60 0.97 1.10 3.33 4.78 29.90 30.40 16.64 17.15 5.21 5.72 10.67 11.18 12.57 13.3 3.84 4.09 NOTES (3) DIA. (5) DIA. (6) Radius Radius DIA. (7) SCHEMATIC T4-LDS-0101, Rev. 3 (121466) ©2012 Microsemi Corporation Page 9 of 9