JANTX2N7224

2N7224, 2N7225, 2N7227 and 2N7228 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surfacemount packages. TO-254AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592. Also available in: U (SMD-1 or TO-267AB) package (See part nomenclature for all available options.) • RoHS compliant by design. (surface mount) 2N7224U & 2N7228U APPLICATIONS / BENEFITS • • Low-profile design. Military and other high-reliability applications. MAXIMUM RATINGS @ TA = +25ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N7224 2N7225 2N7227 2N7228 (2) Drain Current, dc @ TC = +100 ºC 2N7224 2N7225 2N7227 2N7228 (3) Off-State Current (Peak Total Value) 2N7224 2N7225 2N7227 2N7228 Source Current 2N7224 2N7225 2N7227 2N7228 NOTES: 1. 2. Symbol Value TJ & Tstg RӨJC -55 to +150 0.83 4 150 ± 20 34.0 27.4 14.0 12.0 21 17 9 8 136 110 56 48 34.0 27.4 14.0 12.0 PT VGS ID1 ID2 IDM IS Unit o °C C/W W V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 A Derated linearly by 1.2 W/ºC for TC > +25 ºC. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by pin diameter: MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com 3. IDM = 4 x ID1 as calculated in note 2. T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 1 of 9 2N7224, 2N7225, 2N7227 and 2N7228 MECHANICAL and PACKAGING • • • • • CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Part number, date code, and polarity symbol. WEIGHT: 6.5 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N7224 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial Symbol di/dt IF RG VDD VDS VGS JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 2 of 9 2N7224, 2N7225, 2N7227 and 2N7228 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N7224 2N7225 2N7227 2N7228 VGS = 0 V, ID = 1.0 mA Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25 mA VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C Gate Current VGS = ± 20 V, VDS = 0 V VGS = ± 20 V, VDS = 0 V, TJ = +125°C Drain Current VGS = 0 V, VDS = 80 V VGS = 0 V, VDS = 160 V VGS = 0 V, VDS = 320 V VGS = 0 V, VDS = 400 V Drain Current VGS = 0 V, VDS = 80 V, TJ = +125 °C VGS = 0 V, VDS = 160 V, TJ = +125 °C VGS = 0 V, VDS = 320 V, TJ = +125 °C VGS = 0 V, VDS = 400 V, TJ = +125 °C V(BR)DSS 100 200 400 500 2.0 1.0 Max. Unit V 4.0 V 5.0 IGSS1 IGSS2 ±100 ±200 nA 2N7224 2N7225 2N7227 2N7228 IDSS1 25 µA 2N7224 2N7225 2N7227 2N7228 IDSS2 0.25 mA rDS(on)1 0.070 0.100 0.315 0.415 Ω rDS(on)2 0.081 0.105 0.415 0.515 Ω rDS(on)3 0.11 0.17 0.68 0.90 VSD 1.8 1.9 1.7 1.7 2N7224 2N7225 2N7227 2N7228 Static Drain-Source On-State Resistance VGS = 10 V, ID = 34.0 A pulsed VGS = 10 V, ID = 27.4 A pulsed VGS = 10 V, ID = 14.0 A pulsed VGS = 10 V, ID = 12.0 A pulsed 2N7224 2N7225 2N7227 2N7228 T4-LDS-0102, Rev. 3 (121485) Min. VGS(th)1 VGS(th)2 VGS(th)3 Static Drain-Source On-State Resistance VGS = 10 V, ID = 21.0 A pulsed VGS = 10 V, ID = 17.0 A pulsed VGS = 10 V, ID = 9.0 A pulsed VGS = 10 V, ID = 8.0 A pulsed Static Drain-Source On-State Resistance TJ = +125°C VGS = 10 V, ID = 21.0 A pulsed VGS = 10 V, ID = 17.0 A pulsed VGS = 10 V, ID = 9.0 A pulsed VGS = 10 V, ID = 8.0 A pulsed Diode Forward Voltage VGS = 0 V, ID = 34.0 A pulsed VGS = 0 V, ID = 27.4 A pulsed VGS = 0 V, ID = 14.0 A pulsed VGS = 0 V, ID = 12.0 A pulsed Symbol 2N7224 2N7225 2N7227 2N7228 2N7224 2N7225 2N7227 2N7228 ©2012 Microsemi Corporation Ω V Page 3 of 9 2N7224, 2N7225, 2N7227 and 2N7228 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol On-State Gate Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224 2N7225 2N7227 2N7228 Gate to Source Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224 2N7225 2N7227 2N7228 Gate to Drain Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224 2N7225 2N7227 2N7228 Min. Max. Unit Qg(on) 125 115 110 120 nC Qgs 22 22 18 19 nC Qgd 65 60 65 70 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Rinse time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Turn-off delay time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Fall time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Diode Reverse Recovery Time di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 34.0 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 27.4 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 14.0 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 12.0 A T4-LDS-0102, Rev. 3 (121485) Symbol Min. 2N7224 2N7225 2N7227 2N7228 td(on) 35 ns 2N7224 2N7225 2N7227 2N7228 tr 190 ns 2N7224 2N7225 2N7227 2N7228 td(off) 170 ns 2N7224 2N7225 2N7227 2N7228 tf 130 ns trr 500 950 1200 1600 ns 2N7224 2N7225 2N7227 2N7228 ©2012 Microsemi Corporation Page 4 of 9 2N7224, 2N7225, 2N7227 and 2N7228 Thermal Response (ZθJC) GRAPHS t1, Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Impedance Curves T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 5 of 9 2N7224, 2N7225, 2N7227 and 2N7228 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs TC CASE TEMPERATURE (ºC) For 2N7225 ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) TC CASE TEMPERATURE (ºC) For 2N7224 TC CASE TEMPERATURE (ºC) For 2N7227 T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation TC CASE TEMPERATURE (ºC) For 2N7228 Page 6 of 9 2N7224, 2N7225, 2N7227 and 2N7228 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7224 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7225 T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 7 of 9 2N7224, 2N7225, 2N7227 and 2N7228 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) ID DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7227 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7228 T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 8 of 9 2N7224, 2N7225, 2N7227 and 2N7228 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Glass meniscus included in dimension D and E. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0102, Rev. 3 (121485) Ltr BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 ©2012 Microsemi Corporation Dimensions Inch Millimeters Min Max Min Max .535 .545 13.59 13.84 .249 .260 6.32 6.60 .035 .045 0.89 1.14 .510 .570 12.95 14.48 .150 BSC 3.81 BSC .150 BSC 3.81 BSC .139 .149 3.53 3.78 .665 .685 16.89 17.40 .790 .800 20.07 20.32 .040 .050 1.02 1.27 .535 .545 13.59 13.84 Drain Source Gate Notes 3, 4 3, 4 Page 9 of 9