JANTX2N7236U

2N7236U Qualified Levels: JAN, JANTX, and JANTXV P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/595 DESCRIPTION This 2N7236U switching transistor is military qualified up to the JANTXV level for highreliability applications. This device is also available in a TO-254AA leaded package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. U (SMD-1 or FEATURES TO-267AB) • Surface mount equivalent of JEDEC registered 2N7236 number. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/595. Package (See part nomenclature for all available options.) • RoHS compliant by design. Also available in: TO-254AA package APPLICATIONS / BENEFITS • • (leaded) 2N7236 Low-profile design. Military and other high-reliability applications. MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC (2) Drain Current, dc @ TC = +100 ºC (3) Off-State Current (Peak Total Value) Source Current NOTES: Symbol Value TJ & Tstg RӨJC VGS ID1 ID2 IDM -55 to +150 1.0 4 125 ± 20 -18 -11 -72 V A A A (pk) IS -18 A PT Unit o °C C/W W 1. 2. Derate linearly by 1.0 W/ºC for TC > +25 ºC. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by pin diameter: 3. IDM = 4 x ID1 as calculated in note 2. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Page 1 of 7 2N7236U MECHANICAL and PACKAGING • • • • • CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Manufacturer’s ID, part number, and date code. WEIGHT: 0.9 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N7236 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial Symbol di/dt IF RG VDD VDS VGS SMD Surface Mount Package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Page 2 of 7 2N7236U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1.0 mA Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25 mA VDS ≥ VGS, ID = -0.25 mA, TJ = +125 °C VDS ≥ VGS, ID = -0.25 mA, TJ = -55 °C Gate Current VGS = ± 20 V, VDS = 0 V VGS = ± 20 V, VDS = 0 V, TJ = +125 °C Drain Current VGS = 0 V, VDS = -80 V Symbol Min. V(BR)DSS -100 VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 Max. Unit V -4.0 V -5.0 IGSS1 IGSS2 ±100 ±200 nA IDSS1 -25 µA Drain Current VGS = 0 V, VDS = -100 V, TJ = +125 °C IDSS2 -1.0 mA Drain Current VGS = 0 V, VDS = -80 V, TJ = +125 °C IDSS3 -0.25 mA rDS(on)1 0.20 Ω Static Drain-Source On-State Resistance VGS = -10 V, ID = -18.0 A pulsed rDS(on)2 0.22 Ω Static Drain-Source On-State Resistance TJ = +125°C VGS = -10 V, ID = -11.0 A pulsed rDS(on)3 0.34 Ω VSD -5.0 V Max. Unit Qg(on) 60 nC Gate to Source Charge VGS = -10 V, ID = -18.0 A, VDS = -50 V Qgs 13 nC Gate to Drain Charge VGS = -10 V, ID = -18.0 A, VDS = -50 V Qgd 35.2 nC Static Drain-Source On-State Resistance VGS = 10 V, ID = -11.0 A pulsed Diode Forward Voltage VGS = 0 V, ID = -18.0 A pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge VGS = -10 V, ID = -18.0 A, VDS = -50 V T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Symbol Min. Page 3 of 7 2N7236U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time ID = -11.0 A, VGS = -10 V, RG = 9.1 Ω, VDD = -50 V td(on) 35 ns Rinse time ID = -11.0 A, VGS = -10 V, RG = 9.1 Ω, VDD = -50 V tr 85 ns Turn-off delay time ID = -11.0 A, VGS = -10 V, RG = 9.1 Ω, VDD = -50 V td(off) 85 ns Fall time ID = -11.0 A, VGS = -10 V, RG = 9.1 Ω, VDD = -50 V tf 65 ns Diode Reverse Recovery Time di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = -18.0 A trr 280 ns T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Page 4 of 7 2N7236U Thermal Response (ZθJC) GRAPHS t1, Rectangle Pulse Duration (seconds) ID DRAIN CURRENT (AMPERES) FIGURE 1 Thermal Impedance Curves TC CASE TEMPERATURE (ºC) FIGURE 2 Maximum Drain Current vs Case Temperature Graphs T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Page 5 of 7 2N7236U ID DRAIN CURRENT (AMPERES) GRAPHS (continued) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 Maximum Safe Operating Area T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Page 6 of 7 2N7236U PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0061-1, Rev. 1 (121515) ©2012 Microsemi Corporation Symbol BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Term 1 Term 2 Term 3 DIMENSIONS MILLIMETERS Min Max Min Max .620 .630 15.75 16.00 .445 .455 11.30 11.56 .142 3.60 .010 .020 .026 .050 .410 .420 10.41 10.67 .152 .162 3.86 4.11 5.33 BSC .210 BSC 2.67 BSC .105 BSC .370 .380 9.40 9.65 .135 .145 3.43 3.68 .030 0.76 .035 0.89 Drain Gate Source INCH Page 7 of 7