TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
Qualified Level
2N2484
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
Symbol
2N2484
Unit
VCEO
VCBO
VEBO
IC
60
60
6.0
50
360
1.2
-65 to +200
Vdc
Vdc
Vdc
mAdc
mW
W
0
C
PT
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.06 mW/0C above TA = +250C
2) Derate linearly 6.85 mW/0C above TC = +250C
Symbol
RθJC
Max.
146
Unit
C/W
0
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
60
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
Collector-Base Cutoff Current
VCB = 45 Vdc
VCB = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 5.0 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICES
5.0
ηAdc
ICBO
5.0
10
ηAdc
µAdc
ICEO
2.0
ηAdc
IEBO
2.0
10
ηAdc
µAdc
120101
Page 1 of 2
2N2484 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
45
200
225
250
250
225
500
675
800
800
800
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 µAdc, VCE = 5.0 Vdc
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 mAdc, IB = 100 µAdc
Base-Emitter Voltage
VCE = 5.0 Vdc, IC = 100 µAdc
hFE
VCE(sat)
0.3
Vdc
Vdc
VBE
0.5
0.7
hfe
3.0
2.0
7.0
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
Open Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Open Circuit Reverse-Voltage Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
hoe
40
hre
8.0x10-4
hie
3.5
24
hfe
250
900
µmhos
kΩ
Cobo
5.0
pF
Cibo
6.0
pF
120101
Page 2 of 2
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