JANTXV2N3700

2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3700 number. • • JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for JANS_2N3700.) RoHS compliant versions available (commercial grade only). • TO-18 (TO-206AA) Package Also available in: UB package (surface mount) 2N3700UB APPLICATIONS / BENEFITS • • • • Leaded, hermetically sealed TO-18 package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2N3057A o MAXIMUM RATINGS @ T A = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature Thermal Impedance Junction-to-Ambient Thermal Impedance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation: Notes: o (1) @ T A = +25 C o (2) @ T C = +25 C Symbol T J and T STG R ӨJA R ӨJC V CEO V CBO V EBO IC Value -65 to +200 325 150 80 140 7.0 1.0 Unit o C o C/W o C/W V V V A PD 0.5 1.0 W 1. Derate linearly 2.85 mW/°C for T A ≥ +25 °C. 2. Derate linearly 10.3 mW/°C for T C ≥ +25 °C. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 6 2N3700 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, nickel plated kovar base, nickel cap. TERMINALS: Gold plate over nickel, kovar for JANS. Gold plate over nickel, kovar, solder dipped for JAN, JANTX, and JANTXV. MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 0.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3700 (e4) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial RoHS Compliance e4 = RoHS compliant (without solder dip) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol f IB IE TA TC V CB V CE V EB SYMBOLS & DEFINITIONS Definition Frequency Base current (dc) Emitter current (dc) Ambient temperature Case temperature Collector to base voltage (dc) Collector to emitter voltage (dc) Emitter to base voltage (dc) T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 6 2N3700 ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 30 mA Collector-Base Cutoff Current V CB = 140 V Emitter-Base Cutoff Current V EB = 7 V Collector-Emitter Cutoff Current V CE = 90 V Emitter-Base Cutoff Current V EB = 5.0 V ON CHARACTERISTICS Forward-Current Transfer Ratio I C = 150 mA, V CE = 10 V I C = 0.1 mA, V CE = 10 V I C = 10 mA, V CE = 10 V I C = 500 mA, V CE = 10 V I C = 1.0 A, V CE = 10 V Collector-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA I C = 500 mA, I B = 50 mA Base-Emitter Saturation Voltage I C = 150 mA, I B = 15 mA DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. V (BR)CEO 80 Max. Unit V I CBO 10 µA I EBO1 10 µA I CES 10 nA I EBO2 10 nA h FE 100 50 90 50 15 300 300 300 V CE(sat) 0.2 0.5 V V BE(sat) 1.1 V Unit Symbol Min. Max. Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 1.0 mA, V CE = 5.0 V, f = 1.0 kHz h fe 80 400 Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio I C = 50 mA, V CE = 10 V, f = 20 MHz |h fe | 5.0 20 Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 12 pF Input Capacitance V EB = 0.5 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 60 pF T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 6 2N3700 ELECTRICAL CHARACTERISTICS @ T A = +25 °C unless otherwise noted (continued) SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = 25 °C, 1 cycle, t = 10 ms Test 1 2N3700 V CE = 10 V I C = 180 mA Test 2 2N3700 V CE = 40 V I C = 45 mA Test 3 2N3700 V CE = 80 V I C = 22.5 mA IC – COLLECTOR CURRENT - A (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. V CE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area @ T A = 25 ºC T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 6 2N3700 Maximum DC Operation Rating (W) GRAPHS o T A ( C) Ambient Maximum DC Operation Rating (W) FIGURE 1 Temperature-Power Derating (R ӨJA ) Leads = 0.125 inch (3.175mm) o T C ( C) Case at base FIGURE 2 Temperature-Power Derating (R ӨJC ) T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 6 2N3700 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inch Millimeters Min Max Min Max 0.178 0.195 4.52 4.95 0.170 0.210 4.32 5.33 0.209 0.230 5.31 5.84 0.100 TP 2.54 TP 0.016 0.021 0.41 0.53 0.500 0.750 12.70 19.05 0.016 0.019 0.41 0.48 0.050 1.27 0.250 6.35 0.100 2.54 0.030 0.76 0.028 0.048 0.71 1.22 0.036 0.046 0.91 1.17 0.010 0.25 45° TP 45° TP 1, 2, 9, 11, 12 Note 6 7,8 7,8 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This device may be measured by direct methods. 7. Dimension LU applies between L 1 and L 2 . Dimension LD applies between L 2 and LL minimum. Diameter is uncontrolled in L 1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 6