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JANTXV2N3766

JANTXV2N3766

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    JANTXV2N3766 - NPN POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
JANTXV2N3766 数据手册
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 80 6.0 2.0 4.0 25 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 7.0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66* (TO-213AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 V(BR)CEO 60 80 500 500 10 10 10 10 500 Vdc ICEO µAdc ICEX µAdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 0.5 Adc, IB = 0.05 Adc Base-Emitter Voltage IC = 1.0 Adc, VCE = 10 Vdc hFE 30 40 20 160 VCE(sat) VBE(on) 2.5 1.0 1.5 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe Cobo 1.0 8.0 50 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc t on 0.25 2.5 µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.25 Vdc, IC = 4.0 Adc Test 2 VCE = 20 Vdc, IC = 1.25 Adc Test 3 VCE = 50 Vdc, IC = 150 mAdc 2N3766 VCE = 65 Vdc, IC = 150 mAdc 2N3767 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
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