JANTXV2N6782

2N6782, 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6782, 2N6784 and 2N6786 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556. TO-205AF (TO-39) Package (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). Also available in: APPLICATIONS / BENEFITS U-18 LCC package • Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility. • Military and other high-reliability applications. (surface mount) 2N6782U & 2N6786U MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 °C (1) @ T C = +25 °C Drain-Source Voltage, dc 2N6782 2N6784 2N6786 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6782 2N6784 2N6786 (2) Drain Current, dc @ T C = +100 ºC 2N6782 2N6784 2N6786 (3) Off-State Current (Peak Total Value) 2N6782 2N6784 2N6786 Source Current 2N6782 2N6784 2N6786 Symbol Value T J & T stg R ӨJC -55 to +150 8.33 0.8 15 100 200 400 ± 20 3.50 2.25 1.25 2.25 1.50 0.80 14.0 9.0 5.5 3.50 2.25 1.25 PT V DS V GS I D1 I D2 I DM IS See notes on next page. T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Unit o °C C/W W V V A A A (pk) A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 9 2N6782, 2N6784 and 2N6786 Notes: 1. Derate linearly 0.12 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. 3. I DM = 4 x I D1 as calculated in note 1. MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6782 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 2 of 9 2N6782, 2N6784 and 2N6786 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6782 2N6784 2N6786 V GS = 0 V, I D = 1.0 mA Symbol Min. V (BR)DSS 100 200 400 Max. Unit V Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C V GS(th)1 V GS(th)2 V GS(th)3 Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 °C I GSS1 I GSS2 ±100 ±200 nA 2.0 1.0 4.0 V 5.0 Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V 2N6782 2N6784 2N6786 I DSS1 25 µA Drain Current V GS = 0 V, V DS = 80 V, T J = +125 °C V GS = 0 V, V DS = 160 V, T J = +125 °C V GS = 0 V, V DS = 320 V, T J = +125 °C 2N6782 2N6784 2N6786 I DSS2 0.25 mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.50 A pulsed V GS = 10 V, I D = 0.80 A pulsed 2N6782 2N6784 2N6786 0.60 1.50 3.60 Ω Static Drain-Source On-State Resistance V GS = 10 V, I D = 3.50 A pulsed V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.25 A pulsed 2N6782 2N6784 2N6786 0.61 1.60 3.70 Ω Static Drain-Source On-State Resistance T J = +125 °C V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.50 A pulsed V GS = 10 V, I D = 0.80 A pulsed 2N6782 2N6784 2N6786 1.08 2.81 7.92 Ω Diode Forward Voltage V GS = 0 V, I D = 3.50 A pulsed V GS = 0 V, I D = 2.25 A pulsed V GS = 0 V, I D = 1.25 A pulsed 2N6782 2N6784 2N6786 T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation r DS(on)1 r DS(on)2 r DS(on)3 V SD 1.5 1.5 1.4 V Page 3 of 9 2N6782, 2N6784 and 2N6786 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol Min. Max. Unit On-State Gate Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782 2N6784 2N6786 Q g(on) 8.1 8.6 12 nC Gate to Source Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782 2N6784 2N6786 Q gs 1.7 1.5 1.8 nC Gate to Drain Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782 2N6784 2N6786 Q gd 4.5 5.5 7.6 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-on delay time I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6782 2N6784 2N6786 t d(on) 15 ns Rinse time I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6782 2N6784 2N6786 tr 25 20 20 ns Turn-off delay time I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6782 2N6784 2N6786 t d(off) 25 30 35 ns Fall time I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6782 2N6784 2N6786 tf 20 20 30 ns Diode Reverse Recovery Time di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 3.50 A di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 2.25 A di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 1.25 A 2N6782 2N6784 2N6786 t rr 180 350 540 ns T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 4 of 9 2N6782, 2N6784 and 2N6786 Thermal Response (ZθJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 5 of 9 2N6782, 2N6784 and 2N6786 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For 2N6784 ID, DRAIN CURRENT (AMPERES) T C CASE TEMPERATURE (ºC) For 2N6782 T C CASE TEMPERATURE (ºC) For 2N6786 T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 6 of 9 2N6782, 2N6784 and 2N6786 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6782 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6784 T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 7 of 9 2N6782, 2N6784 and 2N6786 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6786 T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 8 of 9 2N6782, 2N6784 and 2N6786 PACKAGE DIMENSIONS Symbol Inch Min Dimensions Millimeters Max Min Max CD 0.305 0.335 7.75 8.51 CH HD 0.160 0.335 0.180 0.370 4.06 8.51 4.57 9.40 LC 0.200 TP 5.08 TP Note 6 LD 0.016 0.021 0.41 0.53 7, 8 LL 0.500 0.750 12.70 19.05 7, 8 LU 0.016 0.019 0.41 0.48 7, 8 1.27 7, 8 L1 0.050 L2 0.250 6.35 P .100 2.54 Q 0.050 7, 8 5 1.27 4 TL 0.029 0.045 0.74 1.14 3 TW 0.028 0.034 0.72 0.86 2 0.25 45° TP 9 6 r α 0.010 45° TP NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, J shall be held for a minimum length of .011 (0.028 mm). Dimension TL measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 9 of 9