JANTXV2N6782U

2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru hole TO-205AF package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N6782, 2N6784 and 2N6786 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556. (See part nomenclature for all available options.) • U-18 LCC Package RoHS compliant by design. Also available in: APPLICATIONS / BENEFITS • Lightweight surface mount design enables mounting in a crowded area. • Military and other high-reliability applications. TO-205AF (TO-39) package (leaded) 2N6782 & 2N6786 MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 °C (1) @ T C = +25 °C Drain-Source Voltage, dc 2N6782U 2N6784U 2N6786U Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6782U 2N6784U 2N6786U (2) Drain Current, dc @ T C = +100 ºC 2N6782U 2N6784U 2N6786U (3) Off-State Current (Peak Total Value) 2N6782U 2N6784U 2N6786U Source Current 2N6782U 2N6784U 2N6786U Symbol Value T J & T stg R ӨJC -55 to +150 8.33 0.8 15 100 200 400 ± 20 3.50 2.25 1.25 2.25 1.50 0.80 14.0 9.0 5.5 3.50 2.25 1.25 PT V DS V GS I D1 I D2 I DM IS See notes on next page. T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Unit o °C C/W W V V A A A (pk) A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 10 2N6782U, 2N6784U and 2N6786U Notes: 1. Derate linearly 0.12 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. 3. I DM = 4 x I D1 as calculated in note 1. MECHANICAL and PACKAGING • • • • • CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6782 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial Surface Mount package JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 2 of 10 2N6782U, 2N6784U and 2N6786U ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6782U 2N6784U 2N6786U V GS = 0 V, I D = 1.0 mA Symbol Min. V (BR)DSS 100 200 400 Max. Unit V Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C V GS(th)1 V GS(th)2 V GS(th)3 Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 °C I GSS1 I GSS2 ±100 ±200 nA 2.0 1.0 4.0 V 5.0 Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V 2N6782U 2N6784U 2N6786U I DSS1 25 µA Drain Current V GS = 0 V, V DS = 80 V, T J = +125 °C V GS = 0 V, V DS = 160 V, T J = +125 °C V GS = 0 V, V DS = 320 V, T J = +125 °C 2N6782U 2N6784U 2N6786U I DSS2 0.25 mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.50 A pulsed V GS = 10 V, I D = 0.80 A pulsed 2N6782U 2N6784U 2N6786U 0.60 1.50 3.60 Ω Static Drain-Source On-State Resistance V GS = 10 V, I D = 3.50 A pulsed V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.25 A pulsed 2N6782U 2N6784U 2N6786U 0.61 1.60 3.70 Ω Static Drain-Source On-State Resistance T J = +125 °C V GS = 10 V, I D = 2.25 A pulsed V GS = 10 V, I D = 1.50 A pulsed V GS = 10 V, I D = 0.80 A pulsed 2N6782U 2N6784U 2N6786U 1.08 2.81 7.92 Ω Diode Forward Voltage V GS = 0 V, I D = 3.50 A pulsed V GS = 0 V, I D = 2.25 A pulsed V GS = 0 V, I D = 1.25 A pulsed 2N6782U 2N6784U 2N6786U T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation r DS(on)1 r DS(on)2 r DS(on)3 V SD 1.5 1.5 1.4 V Page 3 of 10 2N6782U, 2N6784U and 2N6786U ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol Min. Max. Unit On-State Gate Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782U 2N6784U 2N6786U Q g(on) 8.1 8.6 12 nC Gate to Source Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782U 2N6784U 2N6786U Q gs 1.7 1.5 1.8 nC Gate to Drain Charge V GS = 10 V, I D = 3.50 A, V DS = 50 V V GS = 10 V, I D = 2.25 A, V DS = 100 V V GS = 10 V, I D = 1.25 A, V DS = 200 V 2N6782U 2N6784U 2N6786U Q gd 4.5 5.5 7.6 nC Max. Unit t d(on) 15 ns tr 25 20 20 ns t d(off) 25 30 35 ns tf 20 20 30 ns t rr 180 350 540 ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-on delay time 2N6782U I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U Rinse time 2N6782U I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U Turn-off delay time 2N6782U I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U Fall time I D = 3.50 A, V GS = 10 V, R G = 7.5 Ω, V DD = 50 V 2N6782U I D = 2.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 100 V 2N6784U I D = 1.25 A, V GS = 10 V, R G = 7.5 Ω, V DD = 200 V 2N6786U Diode Reverse Recovery Time di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 3.50 A di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 2.25 A di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F = 1.25 A T4-LDS-0064-1, Rev. 1 (121467) 2N6782U 2N6784U 2N6786U ©2012 Microsemi Corporation Min. Page 4 of 10 2N6782U, 2N6784U and 2N6786U Thermal Response (ZθJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 5 of 10 2N6782U, 2N6784U and 2N6786U GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For 2N6784U ID, DRAIN CURRENT (AMPERES) T C CASE TEMPERATURE (ºC) For 2N6782U T C CASE TEMPERATURE (ºC) For 2N6786U T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 6 of 10 2N6782U, 2N6784U and 2N6786U GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6782U V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6784U T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 7 of 10 2N6782U, 2N6784U and 2N6786U GRAPHS (continued) ID DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6786U T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 8 of 10 2N6782U, 2N6784U and 2N6786U PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Min Max Min Max BL BW CH LL1 LL2 LS LS1 .345 .360 .280 .295 .095 .115 .040 .055 .055 .065 .050 BSC .025 BSC 8.77 9.14 7.12 7.49 2.42 2.92 1.02 1.39 1.40 1.65 1.27 BSC 0.635 BSC LS2 LW Q1 Q2 Q3 TL TW .008 BSC .020 .030 .105 REF .120 REF .045 .055 .070 .080 .120 .130 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.14 1.40 1.78 2.03 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 4. Ceramic package only. T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 9 of 10 2N6782U, 2N6784U and 2N6786U PAD LAYOUT PAD ASSIGNMENTS T4-LDS-0064-1, Rev. 1 (121467) ©2012 Microsemi Corporation Page 10 of 10