JANTXV2N6989

TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices 2N6989 2N6989U Qualified Level JAN JANTX JANTXV JANS 2N6990 MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation @ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC 50 75 6.0 800 Vdc Vdc Vdc mAdc PD 1.5 1.0 0.4 -65 to +200 W Top, Tstg 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA = +250C for 2N6990 Ratings apply to total package. 3) Ratings apply to each transistor in the array. TO- 116* 2N6989 20 PIN LEADLESS* 2N6989U 0 C 14 PIN FLAT PACK* 2N6990 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 50 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc; Ic= 10 µAdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc; Ic= 10 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICBO 10 10 ηAdc µAdc IEBO 10 10 ηAdc µAdc 120101 Page 1 of 2 2N6989, 2N6990 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 50 75 100 100 30 Max. Unit ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc VCE(sat) 325 300 0.3 1.0 Vdc Vdc VBE(sat) 0.6 1.2 2.0 hfe 2.5 8.0 hfe 50 DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz (4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Cobo 8.0 pF Cibo 25 pF 120101 Page 2 of 2