LX1732CDU

LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES W WW . Microsemi . C OM The LX1732 is a compact, high efficiency, step-up DC-DC boost regulator implemented in a BiCMOS process technology. This device features variable frequency operation and a built in N-channel MOSFET power switch for optimal functioning in low voltage portable systems. Start-up operation is guaranteed from 1.1V inputs (at light load) and the input voltage can be as low as 0.7V after start-up. This attribute allows the LX1732 to operate in an extended powersavings mode, supplying (data) critical system components, even after battery capacity no longer supports normal operation. The output voltage programming range of 2.2V to 5V, requires only two external resistors via the feedback pin (see Figure 1.0). Output load currents of up to 200mA are achievable and the internal MOSFET is capable of switching up to a 1A current limit. Quiescent current during operation is 200µA (max) and in shutdownmode drops to a mere 1µA thus maximizing overall battery lifetime. The LX1732 features a low battery-detect circuitry that alerts system power management of low input voltages thus allowing portable systems to enter a powersavings mode (e.g., to protect data) 88% Efficiency 200µA Quiescent Current 0.1µA Logic Shutdown Low-Battery Detector 8-Pin MSOP Package APPLICATIONS/BENEFITS Pagers Wireless Phones Hand-Held Computers PDAs RF Tags Two-cell Alkaline Battery Applications Single-cell Lithium Ion 5V Boost IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PRODUCT HIGHLIGHT VBAT CIN R3 R4 IN SHDN L 100% D SW VC Efficiency (%) VOUT R1 90% 80% LX1732 LBI LBO GND FB COUT 70% 60% R2 50% 0 25 50 75 100 125 150 175 200 Output Current Figure 1 – LX1732 General Circuit Topology and Typical Efficiency Performance LX1732 LX1732 PACKAGE ORDER INFO Plastic MSOP DU 8-Pin TA (°C) 0 to 70 RoHS Compliant / Pb-free Transition DC: 0432 LX1732CDU Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX1732CDU-TR) Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM Peak Package Temp for Solder Reflow (40 second max. exposure) ............. 260°C (+0, -5) Supply Voltage (VIN) ........................................................................-0.3V to 7.0V Output Voltage (VC) .........................................................................-0.3V to 7.0V Switch Voltage (VSW) .......................................................................-0.3V to 7.0V Shutdown Input Voltage (V SHDN ) ......................................... -0.3V to (VC + 0.3V) Low Battery Detect Output (V LBO ) ...................................... -0.3V to (VC + 0.3V) Low Battery Detect Input Voltage (VLBI) .............................. -0.3V to (VC+ 0.3V) Feedback Input Voltage (VFB) ............................................... -0.3V to (VC+ 0.3V) Switch Current (ILX).................................................................................. 1.0ARMS Operating Temperature Range ............................................................ 0°C to 70°C Operating Junction Temperature.................................................................. 150°C Storage Temperature Range...........................................................-65°C to 150°C SW VIN SHDN LBI 1 2 3 4 8 7 6 5 GND VC FB LBO DU PACKAGE (Top View) RoHS / Pb-free 100% Matte Tin Lead Finish Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. THERMAL DATA DU Plastic MSOP 8-Pin 206°C/W 39°C/W THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC Junction Temperature Calculation: TJ = TA + (PD x θJC). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. FUNCTIONAL PIN DESCRIPTION NAME IN FB DESCRIPTION Unregulated IC Supply Voltage Input – Input range from +1.1V to 5.5V. Bypass with a 4.7µF or greater capacitor. Control pin for output voltage programming. Connect this pin to a resistive divider network between the output and GND to obtain an output voltage between 2.0V and 5.5V. Active-Low Shutdown Input – A logic low shuts down the device and reduces the supply current to 0.1µA. Connect SHDN to VCC for normal operation. Inductor Switching Connection – Internally connected to the drain of an N-channel MOSFET. Output voltage control pin: Connect this pin to the circuit load and cathode of the switching diode. Common terminal for ground reference. Low Battery Detect Comparator Input – Connect to a resistive divider network between the VCC and GND to set the Low Battery Detect trip point. The LBI threshold is 0.6V. Low Battery Detect Comparator Output – Open drain comparator output. This output is pulled low when VLBI is less than 0.6V. LBO is high impedance during shutdown. SHDN SW VC GND LBI LBO PACKAGE DATA PACKAGE DATA Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS W WW . Microsemi . C OM Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA ≤ 70°C except where otherwise noted and the following test conditions: VIN = 2V, VOUT = 3.3V, RLOAD = 3kΩ, V SHDN = 2V Parameter PFM Regulator Operating Voltage Minimum Operating Voltage Minimum Start-up Voltage Start-up Voltage Temperature Coefficient Output Voltage Range Steady State Output Current Internal N-FET On-resistance Switch Current Limit Switch Pin Leakage Current Oscillator Frequency Duty Cycle Operating Current Error Amplifier Voltage Feed Back Threshold Voltage Feed Back Input Current Shutdown Circuit SHDN Input Bias Current Symbol VIN VIN Test Conditions Min 1.1 LX1732 Typ Max 5.5 Units V V V mV/°C IOUT ≅ 1mA TA = +25°C; IOUT < 10mA 2.2 250 100 0.7 1.1 -2 5.5 κSU VOUT IOUT RDS(ON) ISW ILEAK fOSC D IQ VFB IFB ISHDN VSHDN VSHDN IQ V LBO I LBO VLBT VHLBT VOUT = 3.3V: GBNT VOUT = 5V: GBNT ILX = 100mA VLX = 5.5V, VOUT = 5V VFB = 1V; TA = +25°C VFB = 1V; TA = +25°C (into VC pin) TA = +25°C VFB = 1.4V V mA 0.2 0.47 65 65 100 75 1.0 1.0 1.0 135 85 200 1.230 300 100 Ω A µA kHz % µA V nA nA V 1.170 1.200 SHDN = GND VIN/2 SHDN High Input Voltage SHDN Low Input Voltage Shutdown Operating Current Low Battery Detect Low Battery Detect Output Voltage Low Battery Detect Output Leakage Current Low Battery Threshold Hysteresis SHDN = GND VLBI = 0V, I LBO = -1mA VLBI = VIN, V LBO = 5V 0.54 TA = +25°C 80 0.4 1 0.5 1 0.71 V µA V µA V ELECTRICALS ELECTRICALS Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET APPLICATION CIRCUITS W WW . Microsemi . C OM SW VCO IN Gate Driver Logic Control VIN GND 20µF 10V 316KΩ 27µH UPS5817 SHDN Shutdown Current Sense FB 100KΩ IN SHDN SW VC 316KΩ FB VOUT 20µF 10V LX1732 + VC LBI LBO GND Ref = VBG/2 Band Gap VREF = 1.200V LBI + Figure 2 – LX1732 Block Diagram VIN 20µF 10V 100KΩ 27µH UPS5817 100KΩ IN SHDN SW VC 174KΩ FB LX1732 LBI LBO GND Figure 4 – VOUT = 3.2V; IOUT = 250mA and VLBI = 1.2V Copyright © 2000 Rev. 1.1c, 2005-03-03 Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 LBO 100KΩ VIN VOUT 20µF 10V 100KΩ Figure 3 – VOUT = 5.0V; IOUT = 150mA and VLBI = 2.5V 27µH 20µF IN SHDN SW VC UPS5817 15Ω 20µF 15Ω LX1732 LBI LBO GND FB 15Ω 237KΩ 15Ω 100KΩ APPLICATIONS APPLICATIONS 15Ω Figure 5 – LX1732 driving 5 white LEDs in parallel where VOUT > 3.6V; IOUT = 100mA. Microsemi Page 4 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET APPLICATION NOTE W WW . Microsemi . C OM FUNCTIONAL DESCRIPTION The LX1732 implements a constant on-time and offtime PFM architecture that can deliver a 5.0V output and over 150mA of continuous output current. The freerunning oscillator and logic-circuit initiate the internal MOSFET switching cycle during power-up via the VC pin (see block diagram in Figure 2)). The current passing through the LX pin is detected by the I-sense circuit and compared with the feedback voltage status via the logic circuit. The internal limit for the peak current is set at 1000mA (max). The MOSFET switch remains on for the on-time duration or until the I-sense detects the maximum peak current, or when the feedback threshold voltage is detected at the FB pin. The feedback threshold voltage is set by an external resistor divider network and compared with the internal reference voltage. The LX1732 implements a non-load isolated shutdown mode using an input-voltage referenced signal level via the SHDN pin. Connect this pin to the input supply rail if the shutdown feature is not required. The LX1732 features a low-battery detection circuit that allows for sensing of the input voltage supply. If the supply voltage at LBI drops below the internal reference voltage, the internal MOSFET (opendrain) sinks current to GND. OUTPUT VOLTAGE PROGRAMMING Resistors R1 and R2 of Figure 1 program the output voltage. An optional 1000pF capacitor is recommended across R1 to improve the transient response and reduce output voltage ripple (see Figure 7). The value of R2 should be less than 250KΩ. The value of R1 can be determined using the following equation where VREF is found in the ELECTRICAL CHARACTERISTICS TABLE: ⎡⎛ V ⎞⎤ R1 = R2⎢⎜ OUT ⎟ − 1⎥ ⎜V ⎟ ⎢⎝ REF ⎠ ⎥ ⎣ ⎦ LOW BATTERY DETECTION PROGRAMMING Program the Low Battery Detect voltage threshold by selecting values for resistors R3 and R4 (see Figure 1) using the formula below. Use a value of less than 250KΩ for R4 to minimize threshold error due to the internal comparator’s offset current. The value of R3 can be determined using the following equation. ⎡⎛ V R3 = R4 ⎢⎜ LOW BATT ⎜ ⎢⎝ VREF ⎣ ⎞⎤ ⎟ − 1⎥ ⎟ ⎠⎥ ⎦ The LBO pin’s open drain output requires a pull up resistor (i.e., 100K typ.) to drive external CMOS logic circuits. Connect the LBI pin to ground and omit resistors R3 and R4 when the Low Battery Detect function is not implemented. DESIGN EXAMPLE: Let R3 equal 100K and the required LB threshold equal to 2.5V. R3 = R100⎢⎜ ⎜ ⎡⎛ 2.5V ⎞ ⎤ ⎟ − 1⎥ = 316KΩ 0.6V ⎟ ⎢⎝ ⎥ ⎠ ⎣ ⎦ CAPACITOR SELECTION To minimize ripple voltage, output capacitors in the range of 10uF to 100uF with a low series resistance (ESR) are recommended. Multi-layer ceramic capacitors with X5R or X7R dielectric make an effective choice because they feature small size, very low ESR, a temperature stable dielectric, and can be connected in parallel to increase capacitance. Other low ESR capacitors such as solid tantalum, specialty polymer, or organic semiconductor, make effective choices provided that the capacitor is properly rated for the output voltage and ripple current. Finally, choose an input capacitor of sufficient size to effectively decouple the input voltage source impedance (e.g., CIN > 47µF). LAYOUT CONSIDERATIONS The high peak currents and switching frequencies present in DC/DC converter applications require careful attention to device layout for optimal performance. Basic design rules include: (1) maintaining wide traces for power components (e.g., width > 50mils); (2) place CIN, COUT, the Schottky diode, and the inductor close to the LX1732; (3) minimizing trace capacitance by reducing the etch area connecting the SW pin to the inductor; and (4) minimizing the etch length to the LBI and FB pins to reduce noise coupling into these high impedance sense inputs. Other considerations include placing a 0.1uF capacitor between the LX1732 VOUT pin and GND pin to reduce high frequency noise and decoupling the VIN pin using a 0.1uF capacitor. DESIGN EXAMPLE: Let R2 equal 100K and the required VOUT equal to 5.0V. R1 = 100K ⎢⎜ ⎜ ⎡⎛ 5V ⎞ ⎤ ⎟ − 1⎥ ⎟ ⎢⎝ 1.20 ⎠ ⎥ ⎣ ⎦ APPLICATIONS APPLICATIONS = 316.6KΩ DIODE SELECTION A Schottky diode is recommended for use with the LX1732 because it provides fast switching and superior reverse recovery performance. The Microsemi UPS5817 (20V @ 1A) makes an effective choice for most applications. Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET APPLICATION INFORMATION W WW . Microsemi . C OM INDUCTOR SELECTION A smaller value inductor tends to have a smaller package size. Also using a smaller value inductor can reduce output voltage ripple. The inductor value must be large enough to maintain a reasonable level of inductor current ripple (during a burst period) since this will increase the DC output power capability of the converter. The ripple current can be estimated as: L≈ ⎛ V IN V IN × ⎜1 − ⎜V ∆I L × f SW ⎝ OUT + V FWD ⎞ ⎟ ⎟ ⎠ Step 3: Determine output capacitance. The value of the output capacitor effects output voltage ripple and transient performance. The ripple voltage on the output (ignoring ESR) is the summation of the comparator overdrive voltage, the voltage undershoot (which usually occurs during the first switch “on” time) and overshoot that occurs at the end of the burst when the stored energy in the inductor is delivered to the output capacitor. An approximation of the output ripple voltage is given by this relationship: • THERMAL CONSIDERATIONS Calculating maximum power dissipation for a given operating condition is achieved using the following relationship: PD(max) = [TJ(max) – TA(max)]/ΘJA The maximum device junction temperature is specified at 150oC and the 8 pin MSOP package thermal resistance is 206oC/W. The LX1732 operates within specified parameters up to a maximum ambient temperature of 70oC. The maximum power dissipation achievable under these constraints is (150oC - 70oC)/ 206oC/W = 0.38W and increases to 0.58W at a device ambient temperature of 30oC. Designers should pay close attention to PCB design, device thermal coupling, proximity to other active components, and access to airflow in applications that require the device to operate close to the maximum junction temperature. CIRCUIT DESIGN EXAMPLE Example 1 VIN = 3.0; VOUT = 5.0V+5%; IOUT = 150mA (max); Efficiency > 80%; VOUT(ripple) < 100mV. Step 1: Program the output voltage. This value was already determined in the example on page 5 as 316kΩ. Step 2: Determine an appropriate inductor value. Determine the inductor that will result in a ripple current of 200mA. Assuming a diode forward voltage drop of 350mV and a nominal switching frequency of 130KHz, based on the equation above : L = 51uF; use 47uF standard value. ∆VOUTpp = {(IOUT*tON) / COUT } + { 0.5*(L / COUT)*(IPEAK - IOUT)² / (VOUT – VIN) } + IPEAK* ESRC + 10mV. Based upon this equation, making the output capacitor large, the inductor value small, and the peak current small will help reduce ripple. Figure 14 shows IPEAK equal to 400mA for a 150mA load condition.. Two 100µF tantalum capacitors were placed in-parallel at the output. The total ESRC is approximately 0.10Ω. The estimated ripple voltage based upon these values is calculated to be 59mV. The actual ripple measured in Figure 14 is less than 40mV. Variation in tON, actual ESRC and COUT contribute to the error associated between the measured and calculated value. APPLICATIONS APPLICATIONS Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET EVALUATION BOARD W WW . Microsemi . C OM OVERVIEW The LXE1732 evaluation board is available from Microsemi for assessing overall circuit performance. The evaluation board, shown in Figure 6, is 3 by 3 inches (i.e., 7.6 X 7.6cm) square and factory calibrated for optimal performance over a wide load range. Circuit designers can easily modify output voltage to suit their particular application. Moreover, inductor, capacitors, and diode are easily swapped out to promote design verification of a circuit that maximizes efficiency and minimizes cost for a wide variety of applications. The input and output connections are described in Table 1. ELECTRICAL CONNECTIONS Apply the DC input voltage directly to the VIN pin and connect the test load to the VOUT pin. The output voltage is factory programmed at 3.0V, however, the user may adjust this value by changing the R1 and R2 values accordingly. Install a wire loop at JU1 to close the circuit connection and to examine the inductor current using a suitable current probe. The LX1732 exhibits a low quiescent current (IQ < 1µA: typ) during shutdown mode. This pin is pulled-up to VIN via a 10K resistor. Grounding the SHDN test point shuts down the IC however, the load is still capable of drawing current through the inductor & diode circuit path. Hence, VOUT during shutdown will be approximately the input voltage minus the inductor and diode forward voltage drop. The LXE1732 evaluation board provides an easy and cost effective solution for evaluation of the LX1732. The factory installed component list for the evaluation board is provided in Table 2 and the schematic is shown in Figure 7. Figure 6 – LX1732 Evaluation Board Table 1: Input and Output Pin Assignments Pin Name VIN LBI LBO /SHDN VOUT GND Allowable Range 0 to 6V V < VIN N/A 0 to VIN V > VIN 0V Description Input power supply connection. Low Battery Input voltage threshold sense pin: Programmed for 0.93V nominal. Low Battery Output voltage: Connect a DVM to LBO to observe voltage. Ground to inhibit the LX1732 Programmed for 3.0V nominal output, adjustable via R1 and R2. Circuit Ground EVALUATION EVALUATION Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET EVALUATION BOARD (CONTINUED) W WW . Microsemi . C OM Ref CR1 C1 C2 C3 C4 C5 C6 L1 R1 R2 R3 R4 R5 R6 U1 Table 2: Factory Installed Component Description / Part No. / Supplier Schottky Diode; 1N5817; (Microsemi) 0.01µF 50VCeramic Capacitor; (various) 0.1µF 50VCeramic Capacitor; (various) 100µF, 6.3V Tantalum Capacitor; (various) 100µF, 6.3V Tantalum Capacitor; (various) 100µF, 6.3V Tantalum Capacitor; (various) 100µF, 6.3V Tantalum Capacitor; (various) 47µH Inductor – shielded; (various) 392KΩ Resistor; (various) 255KΩ Resistor; (various) 150KΩ Resistor; (various) 270KΩ Resistor; (various) 50Ω Resistor; (various) 100KΩ Resistor; (various) Boost Controller IC; LX1732CDU; (Microsemi) Note: The minimum part set for a working power supply consists of: U1, L1, CR1, C3, C5, R1, R2 EVALUATION BOARD (CONTINUED) VIN 1 C4&7 200µF L1 R3 47.0µH 150K U1 VIN SHDN LBI 2 C2 0.1µF 50V LBO R4 270K GND SW VC FB LBO 2 JU1 Jumper CR1 UPS5817 VOUT R6 100K R1 392K C1 0.1µF C3 100µF LX1732CDU R2 255K LBI EVALUATION EVALUATION C6 100µF R5 50 GND GND Figure 7 – LXE1732: LX1732 Evaluation Board Schematic Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM 100% 5.200 5.000 4.800 90% 4.600 4.400 4.200 Efficiency (%) Voltage (V) 80% 4.000 3.800 3.600 3.400 3.200 3.000 2.800 70% 60% 2.600 2.400 2.200 50% 0 25 50 75 100 Output Current 125 150 175 200 2.000 0 25 50 75 100 125 150 175 200 Output Current Figure 8 – Efficiency vs. Output Current (mA) Top: VIN = 3.0V, VOUT = 5.0V, L1 = 47.0µH; Bottom: VIN = 1.5V, VOUT = 3.0, L1 = 47.0µH. Figure 9 – Line Regulation vs. Output Current (mA) Configuration: Top: VIN = 3.0V, VOUT = 5.0V, Bottom: VIN = 1.5V, VOUT = 3.0V GRAPHS GRAPHS Figure 10: Step Load Response Configuration: VIN = 1.5V; CH2: VOUT = 3.0V; CH3 ILOAD = 5mA to 110mA; CH4: IL Figure 11 – Switching Waveforms: CH2 = VOUT, CH1 = SW pin, CH4 = Inductor Current where IOUT = 75mA; VIN = 1.5V; VOUT = 3.0V; L = 47µH; COUT = 200µF Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM Figure 12– Switching Waveforms: CH2 = VOUT, CH1 = SW pin, CH4 = Inductor Current where IOUT = 240mA; VIN = 2.0V; VOUT = 3.0V; L = 47µH; COUT = 200µF Figure 13 – Switching Waveforms: CH2 = VOUT, CH1 = SW pin, CH4 = Inductor Current where IOUT = 80mA; VIN = 3.0V; VOUT = 5.0V; L = 47µH; COUT = 200µF Figure 14– Switching Waveforms: CH2 = VOUT, CH1 = SW pin, CH4 = Inductor Current where IOUT = 150mA; VIN = 3.0V; VOUT = 5.0V; L = 47µH; COUT = 200µF GRAPHS GRAPHS Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 10 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM DU 8-Pin Miniature Shrink Outline Package (MSOP) A B H G P M C N K INCHES MIN MAX .112 .120 .114 .122 – 0.043 0.009 0.160 0.025 BSC 0.015 0.025 0.005 0.007 0.037 BSC 0.016 0.027 3° 0.002 0.006 0.187 0.198 D Dim A B C D G H J K L M N P L MILLIMETERS MIN MAX 2.85 3.05 2.90 3.10 – 1.10 0.25 0.40 0.65 BSC 0.38 0.64 0.13 0.18 0.95 BSC 0.40 0.70 3° 0.05 0.15 4.75 5.05 MECHANICALS MECHANICALS Note: Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(0.006”) on any side. Lead dimension shall not include solder coverage. Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 11 LX1732 INTEGRATED PRODUCTS High Current PFM Boost Converter P RODUCTION D ATA S HEET NOTES W WW . Microsemi . C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.1c, 2005-03-03 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 12