LX5501ASE

LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 11 dB at 6 GHz P1dB ~ 11 dBm at 6 GHz SOT-23 Package This general-purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired voice and data communication products as well as in broadband test equipment operating up to 6 GHz. The amplifier is available in a plastic 5-lead SOT-23 package. W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS PA driver for WLAN and Cordless Phones. VCO buffer. Low Current, High Gain Cascaded Amplifiers. PRODUCT HIGHLIGHT C4 C3 • • • Fully characterized for 5v operation (with external bias resistor). Input and output matched to 50 ohms for ease of cascading. Cascaded gain blocks can be individually biased for the lowest supply current. L1 VCC Rext C1 3 C2 IN OUT LX5501A 5 1 4 2 LX5501A LX5501A PACKAGE ORDER INFO TA(°C) -40 to +85°C SE Plastic SOT-23 5 pin RoHS Compliant / Pb-free Transition DC: 0503 LX5501ASE Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5501ASE-TR) Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM DC Supply Voltage ............................................................................................6V Collector Current ........................................................................................100mA RF Input Power........................................................................................... 10dBm Operating Temperature Range ...........................................................-40 to +85°C Storage Temperature Range...........................................................-65°C to 150°C Peak Package Solder Reflow Temp. (40 second max. exposure) ... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. GND GND RF Input 1 2 3 5 RF Output / VCC 4 GND SE PACKAGE (Top View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Pin No. 1 2 3 4 5 Ground Ground RF Input Ground RF Output/VCC Supply RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (with appropriate external resistor) Quiescent Current (No RF input) Symbol VCC Icq LX5501A Typ Max 6 40 Units V mA Description Min 3.5 10 ELECTRICAL CHARACTERISTICS Conditions: +25°C, 5V supply voltage. Parameter Small Signal Gain P1dB Compression Input Return Loss Output Return Loss Isolation Harmonics Quiescent Current Symbol S21 P1dB S11 S22 S12 Icq Test Conditions Frequency = 5.8 GHz Frequency = 5.8 GHz Frequency = 2.4-6 GHz Frequency = 2.4-6 GHz Frequency = 2.4-6 GHz Frequency = 5.8 GHz, Pout = 10 dBm Min LX5501A Typ Max 11.4 11.5 -10 -10 -20 -30 30 Units dB dBm dB dB dB dBC mA GENERAL SPECIFICATIONS (FIG 1. TEST CIRCUIT) ELECTRICALS ELECTRICALS Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET FIGURE 1: TEST CIRCUIT FOR 1 TO 6 GHZ W WW . Microsemi . C OM C4 C3 L1 VCC Rext C1 3 C2 IN OUT LX5501A 5 1 4 2 Component C1,C2 C3 C4 L1 REXT Value 10pF 10pf 0.1uF 3.3nH 50 ohms Comment DC block (0402) RF decoupling (0402) LF decoupling (0402) RF choke (0402) Bias setting resistor (0402) APPLICATION APPLICATION Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET APPLICATION NOTE W WW . Microsemi . C OM DESIGN CONSIDERATIONS The gain block is self-biased by the voltage that is present on pin 5 (VBIAS). Chart 1 shows the quiescent current vs. bias voltage characteristic. Chart 2 shows device characteristics when operated with a 5v supply and with different values of external resistor. Using Chart 2 it is possible to trade-off Gain and P1dB compression point for supply current. Supply voltages other than 5v may be accommodated by adjusting the value of the external resistor to produce the same quiescent current as the 5v case. To calculate the resistor required for a different supply voltage use the following formula: R EXT (V1)=R EXT (5V)• (V1-VBIAS ) (5-VBIAS ) Where VBIAS is the Pin 5 bias voltage obtained from Chart 1and V1 is the desired supply voltage. TYPCAL QUIESCENT CURRENT VS. PIN 5 BIAS VOLTAGE @ 25°C 70 TYPCAL P1DB, GAIN AND IC VS. REXT @ 25°C 14 12 35 30 25 20 15 10 5 0 25 75 125 175 Icq, Quiescent Current - mA 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 Icq 10 8 6 4 2 0 Gain Ic P 1dB Pin 5 Bias Voltage - Volts Rext - ohm s Frequency = 5.8GHz, VCC = 5V TYPCAL S-PARAMETRS @ 25°C 18 16 14 12 S11 S22 S12 S21 -5 0 TYPCAL 2.4 GHZ CHARACTERISTICS @ 25°C 20 15 P1dB = 12.0 50 45 -10 -15 -20 -25 -30 Pout, Gain - dBm/dB S11, S12, S22 - dB 40 35 30 S21 - dB 10 5 0 -5 dBm 10 8 6 4 2 0 2 25 20 P 1dB P o ut Gain Ic 15 10 5 0 -25 -20 -15 -10 -5 0 5 Ic, Supply Current - mA Ic, Supply Current - mA 60 Gain, P1dB - dB/dBm A APPLICATIONS -10 3 Frequency - GHz VCC = 5V, REXT = 50Ω 4 5 6 Pin - dBm VCC = 5V, REXT = 50Ω Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET TYPCAL 5.8 GHZ CHARACTERISTICS @ 25°C 15 10 5 0 -5 P1dB Pout Gain Ic -25 -20 -15 -10 -5 0 5 P1dB = 11.5 dBm TYPICAL SUPPLY CURRENT VARIATION OVER –40 TO +85°C AMBIENT 45 40 W WW . Microsemi . C OM 50 Supply Current - mA 45 40 35 30 25 20 15 10 5 0 Ic, Supply Current - mA Pout, Gain - dBm/dB 35 30 25 20 15 10 5 0 -20 -15 -10 -5 0 5 10 15 -40 deg C +25 deg C +85 deg C -10 -15 Pin - dBm Frequency = 5.8GHz, VCC = 5V. REXT = 50Ω Pin - dBm VCC = 5V, REXT = 50Ω TYPCAL GAIN VARIATION OVER –40 TO +85°C AMBIENT 14 TYPCAL P1DB VARIATION OVER –40 TO +85°C AMBIENT 12 12 10 10 P1dB - dBm -40 deg C +25 deg C +85 deg C Gain - dB 8 6 4 2 0 -20 8 6 4 2 0 P 1dB -15 -10 -5 0 5 10 15 -50 0 50 100 Pin - dBm Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω Am bient Tem perature - deg C Frequency = 5.8GHz, VCC = 5V, REXT = 50Ω CHARTS CHARTS Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM SE 5 Pin Plastic SOT-23 MILLIMETERS MIN MAX 0.90 1.30 0.90 1.45 0.25 0.50 0.09 0.20 2.80 3.10 1.50 1.75 0.95 BSC 1.90 BSC 2.60 3.00 0.35 0.55 0.00 0.15 10° MAX INCHES MIN MAX 0.035 0.051 0.035 0.057 0.010 0.020 0.004 0.008 0.110 0.122 0.059 0.069 0.038 BSC 0.075 BSC 0.102 0.118 0.014 0.022 0.000 0.006 10° MAX D G H E A1 A C B J K Dim A A1 B C D E F G H I J K Note: F I 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5501A TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET NOTES W WW . Microsemi . C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2004 Rev. 1.1, 2005-07-14 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7