LX5501BSE

LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 9 dB at 6 GHz P1dB ~ 8 dBm at 6 GHz SOT-23 Package W WW . Microsemi . C OM The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired voice and data communication products and broadband test equipment operating up to 6 GHz. The amplifier is available in a plastic 5lead SOT-23 package. APPLICATIONS PA driver for WLAN and Cordless Phones VCO buffer Low Current, High Gain Cascaded Amplifiers PRODUCT HIGHLIGHT • • Input and output matched to 50 ohms for ease of cascading. Cascaded gain blocks can be individually biased for the lowest supply current. PACKAGE ORDER INFO SE -40 to +85°C Plastic SOT-23 5 pin LX5501BSE LX5501B LX5501B RoHS Compliant / Pb-free Transition DC: 0503 Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5501BSE-TR) Copyright © 2000 Rev. 1.0, 2004-01-06 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM DC Supply Voltage ............................................................................................6V Collector Current ........................................................................................100mA RF Input Power........................................................................................... 10dBm Operating Temperature Range ...........................................................-40 to +85°C Storage Temperature Range...........................................................-65°C to 150°C Peak Package Solder Reflow Temp. (40 seconds max. exposure).. 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. GND GND RF Input 1 2 5 RF Output / VCC 3 4 GND SE PACKAGE (Top View) RoHS / Pb-free 100% Matte Tin Lead Finish THERMAL DATA SE Plastic SOT-23 5-Pin 138°C/W 245°C/W THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. FUNCTIONAL PIN DESCRIPTION Pin No. 1 2 3 4 5 Ground Ground RF Input Ground RF Output/VCC Supply RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (with appropriate external resistor) Quiescent Current (No RF input) Symbol VCC Icq LX5501B Typ Max 6 40 Units V mA Description Min 2.7 10 ELECTRICAL CHARACTERISTICS Conditions: +25°C Parameter Small Signal Gain P1dB Compression Input Return Loss Output Return Loss Isolation Harmonics Quiescent Current Copyright © 2000 Rev. 1.0, 2004-01-06 PACKAGE DATA PACKAGE DATA Symbol S21 P1dB S11 S22 S12 Icq Test Conditions Frequency = 6 GHz Frequency = 6 GHz Frequency = 4.9-6 GHz Frequency = 4.9-6 GHz Frequency = 4.9-6 GHz Frequency = 6 GHz, Pout = P1dB Min LX5501B Typ Max 9 8 -10 -9 -20 -30 23 Units dB dBm dB dB dB dBC mA Page 2 GENERAL SPECIFICATIONS (FIG 1. TEST CIRCUIT) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET FIGURE 1: TEST CIRCUIT FOR 4 TO 6 GHZ W WW . Microsemi . C OM C4 C3 REXT VCC L1 C1 3 5 C2 IN OUT 1 LX5501B 4 2 Location C1,C2 C3 C4 L1 REXT Vcc Value 2pF 10pf 0.1µF 3.3nH 5 ohms 2.85V Comment DC block (0402) RF decoupling (0402) LF decoupling (0402) RF choke (0402) Bias setting resistor (0402) Supply Voltage QUIESCENT CURRENT VS BIAS VOLTAGE 50 45 REXT VS SUPPLY VOLTAGE 90 80 70 Icq, Quiescent Current - mA 40 35 30 25 20 15 10 5 0 2.35 2.45 2.55 2.65 2.75 2.85 Rext - ohms 60 50 40 30 20 10 0 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 A APPLICATIONS P in 5 Bias Voltage - Volts Supply Voltage - Volts Recommended REXT Value versus Maximum Supply Voltage Copyright © 2000 Rev. 1.0, 2004-01-06 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET P1DB, GAIN VS VCC 12 10 8 S PARAMETER W WW . Microsemi . C OM 14 12 10 Gain, P1dB - dB, dBm S21 S11 S12 S22 0 -5 8 6 4 -10 6 4 2 Gain P1dB -15 -20 2 0 3.6 0 3 3.1 3.2 3.3 3.4 3.5 S upply V o lt a ge - V o lt s (Frequency = 6 GHz, Rext = 20 o hms ) -25 2 2.5 3 3.5 4 4.5 5 5.5 6 Frequency - GHz (Vcc = 3.3v, Rext = 20 ohms) 5.8GHZ POWER SWEEP 15 40 35 30 5 0 -5 Pout Gain Ic Gain, Output Power - dB, dBm 10 25 20 15 10 5 0 -25 -20 -15 -10 -5 0 5 10 Input P o we r - dB m (Vcc = 3.3V, Rext = 20 o hms) -10 -15 S11,S12,S22 - dB S21 - dB CHARTS CHARTS Copyright © 2000 Rev. 1.0, 2004-01-06 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM SE 5 Pin Plastic SOT-23 D G H E A1 A C B F J I K Dim A A1 B C D E F G H I J K Note: MILLIMETERS MIN MAX 0.90 1.30 0.90 1.45 0.25 0.50 0.09 0.20 2.80 3.10 1.50 1.75 0.95 BSC 1.90 BSC 2.60 3.00 0.35 0.55 0.00 0.15 10° MAX INCHES MIN MAX 0.035 0.051 0.035 0.057 0.010 0.020 0.004 0.008 0.110 0.122 0.059 0.069 0.038 BSC 0.075 BSC 0.102 0.118 0.014 0.022 0.000 0.006 10° MAX MECHANICALS MECHANICALS 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Copyright © 2000 Rev. 1.0, 2004-01-06 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5501B TM ® InGAP HBT Gain Block P RODUCTION D ATA S HEET NOTES W WW . Microsemi . C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.0, 2004-01-06 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6