LX5506

LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT Single-Polarity 3.3V Supply EVM ~ 3% at Pout=18dBm for 64QAM/ 54Mbps OFDM P1dB ~ +26dBm Power Gain ~ 23dB at 5.25GHz for Icq ~100mA Power Gain ~ 21dB at 5.85GHz for Icq ~100mA Total Current ~190mA at Pout=18dBm at 5.25GHz ACPR ~ -50dBc at 30MHz Offset at Pout=18dBm Complete On-Chip Input Match Simple Output Capacitor Match Small Footprint: 3x3mm2 Low Profile: 0.9mm APPLICATIONS The LX5506 is a power amplifier designed for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.95 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and complete on-chip input matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 23dB power gain in the 5.15 5.85GHz frequency range with a simple output matching capacitor pair. For OFDM operation (64QAM, 54Mbps), the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage of 5V, the same device provides +24dBm linear OFDM output power with 5% EVM. The LX5506 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506 an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications. W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FCC U-NII Wireless IEEE 802.11a HiperLAN2 5GHz Cordless Phone PRODUCT HIGHLIGHT PACKAGE ORDER INFO LX5506 LX5506 LQ Plastic MLPQ 16-Pin LX5506LQ RoHS Compliant / Pb-free Transition DC: 0418 Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5506LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................600mA Total Power Dissipation....................................................................................3W RF Input Power.........................................................................................+15dBm Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature........................................................................-65 to +150°C Peak Package Solder Reflow Temperature (40 second max. exposure)........ 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. VC1 VC2 VC3 N.C. N.C. RF OUT RF OUT N.C. 13 14 15 16 12 11 10 9 8 7 6 5 * 1 2 3 4 N.C. RF IN RF IN VCC VB1 VB2 VB3 * Pad is Ground LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish N.C. FUNCTIONAL PIN DESCRIPTION Name RF IN VCC VB1 VB2 VB3 RF OUT VC1 VC2 VC3 GND N.C. Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Supply voltage for the bias reference and control circuits. Bias current control voltage for the first stage. Bias current control voltage for the second stage. Bias current control voltage for the third stage. RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Power supply for the first stage amplifier. Power supply for the second stage amplifier. Power supply for the third stage amplifier. The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. These are unused pins and not connected to the device. They can be treated either as open pins or connected to ground for better heat dissipation. PACKAGE DATA PACKAGE DATA Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Test conditions: Vcc = 3.3V, Vref = 2.9V, Icq = 100mA, TA = 25°C, unless otherwise specified. Parameter Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm Total Current at Pout=18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Ramp-On Time W WW . Microsemi . C OM Condition Symbol f Pout Gp Min. 5.15 25 21 Typ. 26 23 3 190 100 2.2 22 +/-0.5 a) b) 3 ,1 -15 -7 -40 -40 -40 100 Max. 5.35 Min. 5.7 25 19 Typ. 26 21 3 200 100 2.2 20 +/-0.5 a) b) 2 ,1 -15 -15 -40 -60 -40 100 Max. 5.85 Unit GHz dBm dB % mA mA mA dB dB dB dB dB dB dBc dBc ns 64QAM/54Mbps Ictotal Icq Iref S21 ΔS21 ΔS21 S11 S22 S12 For Icq=100mA Over 200MHz o -40 to +85 C -10 -10 Pout = 18dBm Pout = 18dBm 10 - 90% tON Note a) Vref = 2.9V b)Vref = 3.0V ELECTRICALS ELECTRICALS Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET EVM VS POUT FREQ=5.15GHZ 10 9 8 EVM Ictotal 240 230 220 EVM VS POUT FREQ=5.85GHZ 11 10 9 8 EVM Ictotal 260 250 240 230 220 210 200 190 180 170 15 16 17 18 19 20 21 160 W WW . Microsemi . C OM Ictotal (mA) EVM (%) 6 5 4 3 2 1 15 16 17 18 19 20 21 200 190 180 170 160 150 EVM (%) 7 6 5 4 3 2 1 Pout (dBm) Typical EVM and Total Current vs. Pout at Vc = 3.3V (Vc = 3.3V, Icq = 100mA, 64QAM / 54Mbps) Pout (dBm) Typical EVM and Total Current vs. Pout at Vc = 3.3V (Vc = 3.3V, Icq = 100mA, 64QAM / 54Mbps) EVM VS FREQUENCY 5 4.5 4 EVM_Measured EVM_Deembedded 210 205 200 CURRENT VS FREQUENCY Ictotal EVM (%) 3.5 3 2.5 2 1.5 1 5.1 Ictotal (mA) 195 190 185 180 175 170 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Frequency (GHz) Typical EVM vs. Frequency (Vc =3.3V, Icq = 100mA, Pout = 18dBm, 64QAM / 54Mpbs) Typical Total Current vs. Frequency (Vc=3.3V, Icq=100mA, Pout=18dBm, 64QAM/54Mbps) Notes: All EVM data are for OFDM signal of 64QAM/54Mbps and are actual measured data without any de-embedding. Source EVM is around 1.4 - 1.8% for the input power levels for test. ACPR VS OUTPUT POWER -40 -41 -42 -43 -44 -45 -46 -47 -48 -49 -50 -51 -52 -53 -54 -55 15 Freq=5.15GHz Freq=5.85GHz 28 P1dB 27 P1DB VS FREQUENCY ACPR (dBc) @ 30MHz Offset P1dB (dBm) 26 Ictotal (mA) 7 210 CHARTS CHARTS 25 24 23 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 16 17 18 19 20 21 Frequency (GHz) Typical P1dB vs. Frequency (Icq = 100mA for Vc = 3.3V, Icq = 110mA for Vc=4.5V) Pout (dBm) Typical ACPR vs. Output Power (Vc = 3.3V, Icq = 100mA, 64QAM / 54Mpbs) Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET POWER SWEEP DATA 5.15GHZ 30 800 POWER SWEEP DATA 5.85GHZ 30 Pout 700 800 25 Pout Gain Itotal W WW . Microsemi . C OM 25 Gain Itotal 700 Pout (dBm) / Gain (dB) 15 500 Pout (dBm) / Gain (dB) 20 600 20 600 Itotal (mA) 15 500 Itotal (mA) 10 400 10 400 5 300 5 300 0 200 0 200 -5 -28 -23 -18 -13 -8 -3 2 7 12 100 PIN (dBm) -5 -28 100 -23 -18 -13 -8 Pin (dBm) -3 2 7 12 Typical Power Sweep Data at Vc = 3.3V (VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.15GHz Typical Power Sweep Data at Vc = 3.3V (VC = 3.3V, Icq = 100mA, No Heat Sink) Frequency = 5.85GHz RECOMMENDED BIAS RESISTOR 180 160 QUIESCENT CURRENT VS VREF 300 R6=47 R6=180 Bias Resistor R6 (Ohm) 250 140 120 100 80 60 40 Icq (mA) 200 Icq/ vref ~ 0.28mA/mV 150 100 Icq/ vref ~ 0.18mA/mV 50 20 0 2.9 3 3.1 3.2 3.3 0 2.5 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 Available Vref (V) Recommended Bias Resistor for Available Vref (Adjusted R6 value for Obtaining Nominal Icq = 10mA at Vc = 3.3V) Vref (V) Quiescent Current vs. Vref (Vc = 3.3V, Bias Resistor R6 = 47Ω & 180Ω) S-PARAMETER DATA 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5 .2 5.4 5.6 5.8 6.0 SMALL SIGNAL VS SUPPLY VOLTAGE 24 S21 dB(S (1,2)) dB(S (2,1)) dB(S (1,1)) dB(S (2,2)) S21 (dB) @ 5.25GHz 23.5 23 22.5 CHARTS CHARTS 22 21.5 21 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 Frequency (GHz) Typical S-Parameter Data at Room Temperature (Vc = 3.3V, R6 = 0Ω, Vref = 2.9V. Icq = 100mA) Supply Voltage Vc (V) Typical Small Signal Gain vs. Supply Voltage (R6 = 0Ω, Vref = 2.9V, Icq = 100mA for Vc = 3.3V, Freq = 5.25GHz) Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET SMALL SIGNAL VS BIAS REF. 30 SMALL SIGNAL GAIN OVER TEMP 24 23 22 S21 (dB) W WW . Microsemi . C OM 25 S21 (dB) @ 5.25GHz 20 21 20 19 18 +25 0 +85 -20 -40 C C C C C 15 10 PA OFF 5 PA ON 17 16 5.15 0 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 5.25 5.35 5.45 5.55 5.65 5.75 5.85 Vref (V) Typical Small Signal Gain vs. Bias Reference Voltage (Vc = 3.3V, R6 = 47Ω, Vref = 3.0V, Icq = 100mA, Freq = 5.25GHz) Frequency (GHz) Typical Small Signal Gain Variation Over Temperature (Vc = 3.3V, R6 = 0Ω, Vref = 2.9V, Icq = 100mA at Room Temperature) CHARTS CHARTS Copyright © 2003 Rev. 1.2c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET APPLICATION NOTE Location C1/C2 C3 C4=C6 C5=C8 C7 R1/R2/R3 R4/R5 R6 Recommended BOM Value 0.5/0.5pF (0402) 220pF (0402) 1µF (0603) 10µF (0805) 1nF (0402) 100/604/909Ω (0402) 10/10Ω (0402) 0 Ω (For Vref=2.9V, Adjustable for Different Vref) Substrate 10mil GETEK W WW . Microsemi . C OM ε r = 3.9, tan δ = 0.02 Notes: 1) C1/C2 position should be ~30mil from MLP package edge connected with 50 Ohm microstrip. 2) All other component positions are not critical. 3) R6 should be adjusted to maintain nominal Icq for different available Vref values (see R6-Vref plot). 4) For Vref