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LX5509LQ-TR

LX5509LQ-TR

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    VFQFN16_EP

  • 描述:

    IC POWER AMP HBT 5GHZ 16QFN

  • 数据手册
  • 价格&库存
LX5509LQ-TR 数据手册
LX5509 InGaP HBT 5GHz Power Amplifier Abridged Datasheet Description Features The LX5509 is a power amplifier optimized for 802.11ac/a/n applications in the 5.15-5.85 GHz frequency range. The LX5509 includes a three-stage PA, active bias, input/output matching, and a harmonic filter. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V, and provides power gain of 28dB and output powers of 19-20 and 19.5-20.5 dBm at 3.3V across the frequency band for 1.8 and 3% dynamic EVM(DEVM), respectively. The 2nd and 3rd harmonics are lower than 45dBm/MHz over the frequency band due to an integrated harmonic filter. The LX5509 also features an on-chip power detector to help reduce BOM cost and PCB space for implementation of power control in a typical wireless system. The LX5509 is available in a 20-pin 4mm x 4mm quad flat no lead package (QFN 44-20L). The compact footprint, low profile, and excellent thermal capability make the LX5509 an ideal solution for 802.11ac/a/n applications.               Advanced InGaP HBT 5.15-5.85GHz Operation Single-Polarity 3.3V Supply Power Gain ~ 28dB 19-20dBm @1.8%DEVM for 802.11ac 19.5-20.5dBm @3%DEVM for 802.11a
LX5509LQ-TR 价格&库存

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