LX5512E

LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50mA Power Gain ~34dB @ 2.45GHz and Pout = 19dBm Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA. For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications. W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin RoHS Compliant / Pb-free Transition DC: 0418 LX5512E LX5512E LX5512ELQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5512ELQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power............................................................................................. 5dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C Peak Package Solder Reflow Temp (40 seconds maximum exposure) ......... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. N.C. 13 N.C. 15 VC2 14 VC1 16 1 2 3 4 VC3 RF OUT RF OUT DET PWR 12 11 10 9 * N.C. RF IN RF IN VB1 8 7 6 5 N.C. VB3 VB2 THERMAL DATA * Pad is GND LQ PACKAGE (Bottom View) VCC LQ Plastic MLPQ 16-Pin 10°C/W 50°C/W N.C. – No internal connection RoHS / Pb-free 100% Matte Tin Lead Finish THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VB3 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10 nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor, followed by a 10 Ohm resistor VCC RF OUT VC1 VC2 VC3 DET_PWR GND PACKAGE DATA PACKAGE DATA Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass capacitor, followed by a 5 Ohm resistor Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier.. Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C, unless otherwise specified Parameter Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current at Pout=23dBm nd 2 side lobe at 23 dBm Ramp-On Time Detector response W WW . Microsemi . C OM Symbol f Gp Test Conditions Min 2.4 LX5512E Typ Max 2.5 34 3.0 130 50 1.6 34 1.5 1.5 8 10 -50 -40 -40 200 -50 100 1.5 Units GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc ns V 64GQAM / 54Mbps Ic_total Icq Iref S21 ΔS21 ΔS21 S11 S22 S12 For Icq = 50mA Over 100MHz 0°C to +70°C tON Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% 19 dBm OFDM, 100kOhm’s Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS ELECTRICALS Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM 50 40 30 20 10 0 -10 -20 -30 -40 -50 m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=33.462 dB(S(2,1))=35.376 m1 m7 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 1 – S-Parameter (VC = 3.3V, VREF = 2.9V, Icq = 50mA) 2.4 GHz 7 6 5 EVM_PA /[% ] 4 3 2 2.45 GHz 2.5 GHz GRAPHS GRAPHS 1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 2 – EVM with 54Mb/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.9V, Icq = 50mA) Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM 2.4 GHz -45 2.45 GHz 2.5 GHZ -47.5 ACP_30 MHz /[dBc] -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 3 – ACP with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA) 2.4 GHz 175 2.45 GHZ 2.5 GHZ 150 CURRENT_3.3V /mA 125 100 75 GRAPHS GRAPHS 50 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 4 – Current with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA) Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref = 2.9V, Icq = 50mA, Ic = 202mA, Frequency = 2.45GHz) 50 40 30 20 10 0 -10 -20 -30 -40 -50 m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=34.020 dB(S(2,1))=35.911 m1 m7 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) GRAPHS GRAPHS 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 6 – S-Parameter (VC = 5.0V, VREF = 2.9V, Icq = 55mA) Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM 2.4 GHz 4 3.5 3 EVM_PA /[% ] 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 2.45 GHz 2.5 GHz 12 14 16 18 20 22 24 Output Power /[dBm] Figure 7 – EVM with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.9V, Icq =55mA,) 2.4 GHz -45 2.45 GHz 2.5 GHZ -47.5 ACP_30 MHz /[dBc] -50 -52.5 -55 -57.5 GRAPHS GRAPHS -60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 8 – ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.9V, Icq = 55mA) Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES W WW . Microsemi . C OM 2.4 GHz 225 200 CURRENT_5.0V /mA 175 150 125 100 75 50 0 2 4 6 8 10 2.45 GHZ 2.5 GHZ 12 14 16 18 20 22 24 Output Power /[dBm] Figure 9 – Current with 54MB/s 64 QAM OFDM (VC = 5.0V, Vref = 2.9V, Icq = 55mA) GRAPHS GRAPHS Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.9V, Icq = 55mA, Ic = 258mA, Frequency = 2.45GHz) Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET EVALUATION BOARD W WW . Microsemi . C OM Location C1,C3 C2 C4 C5,C7 C6 R1,R2 R3 R4 R5 R6 R7 TL1 TL2 TL3 Substrate Recommended BOM Value 1 uF (0603) 10 nF(0402) 2.2 pF (0402) 120 pF (0402) 47 pF (0402) 50 Ω (0402) 300 Ω (0402) 100 Ω (0402) 10 Ω (0402) 5 Ω (0402) 100 kΩ (0402) 120/10 mil (L/W) 30/10 mil (L/W) 70/10 mil (L/W) 10 mil GETEK εr = 3.9, tan δ = 0.01 50Ω Microstrip width: 22 mil E B EVALUATION BOARD Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM LQ 16-Pin MLPQ 3x3 D b E2 L D2 E or A1 A3 A e K or Pin 1 Indicator Dim A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006 Or D b E2 L Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container. 2. E D2 L1 e A1 A K MECHANICALS MECHANICALS Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 10 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES W WW . Microsemi . C OM NOTES NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2003 Rev. 2.0c, 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 11