LX5516LL

LX5516 TM ® InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module P RODUCTION D AT A S HEET W WW . Microsemi . CO M DESCRIPTION The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 impedance matched at both input and output. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V, it delivers 29dB power gain between 2.4-2.5GHz, at a low quiescent current of 80mA. For 18dBm OFDM output power (64QAM, 54Mbps), the PAM provides a low EVM (Error-Vector Magnitude) of 2.5%, and consumes 130mA total DC current. The LX5516 is available in a 12-pin 2x2mm micro-lead package (MLPQ12L). The compact footprint, ultra low profile, and thermal capability of the MLP package make the LX5516 an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g/n applications. KEY FEATURES Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current ~80mA Power Gain ~ 29 dB Pout=~+18dBm for 2.5% EVM, OFDM 64QAM/54Mbps Total Current ~130mA for Pout= +18dBm 50 Input/Output Matching On-chip Output Power Detector Small Footprint: 2x2mm2 Ultra Low Profile:0.46mm APPLICATIONS IEEE 802.11b/g/n IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com BLOCK DIAGRAM Vc RF Input RF Input Match F R RF Active Bias Network Output Match Output Vcc Vref Det 2X2MM MLP PACKAGE PACKAGE ORDER INFO LL Plastic MLPQ 12 pin 2x2mm LX5516LL LX5516 LX5516 N ote: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5516LL-TR) C opyright © 2008 Rev 1.0, 2008-12-16 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5516 TM ® InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module P RODUCTION D AT A S HEET W WW . Microsemi . CO M A B SO LU TE M AX I MU M R A TIN G S DC Supply Voltage, RF off ..............................................................................5V Collector Current...................................................................................... 500mA Total Power Dissipation .................................................................................2W RF Input Power (With 50 Ohm Load at Output) ...................................... +10 dBm Maximum operating Junction Temperature (Tj)……………………………… ….. 150° C Operation Ambient Temperature ..................................................... -40 to +85° C Storage Temperature.....................................................................-60 to +150° C Package Peak Temp. for Solder Reflow (40 seconds maximum exposure)260° (+0 C -5) N ote: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. PACKAGE PIN OUT VC1 RF Output RF Input DET VB VCC LL PACKAGE (Bottom View) R oHS / Pb-free 100% NiPdAu Lead Finish TH ER M A L D A TA LL Plastic MLPQ 12-Pin 7.9 C/W 76.5 C/W THERMAL RESISTANCE-JUNCTION TO CASE, θ JC THERMAL RESISTANCE-JUNCTION TO AMBIENT, θ JA Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pcboard system. All of the above assume no ambient airflow. FUNCTIONAL PIN DESCRIPTION Name RF IN (2) VCC (4) VB (5) DET(6) RF OUT(8) VC1(11) GND (1,3,7,9,10, 12) RF input for the power amplifier. Supply voltage for the bias reference and control circuits. Bias control voltage for the first and second stage. Output power Detector. RF output and power supply for the second stage amplifier. DC supply voltage for the first stage amplifier. The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. Description PACKAGE DATA PACKAGE DATA PINs to be grounded to the center metal on the PCB. C opyright © 2008 Rev 1.0, 2008-12-16 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 TM ® W WW . Microsemi . C OM INFORMATION Thank you for your interest in Microsemi® Analog Mixed Signal products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: IPGdatasheets@microsemi.com Be sure to specify the data sheet you are requesting and include your company name and contact information and or vcard. We look forward to hearing from you. Copyright Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570