MC5616

MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be tolerated. These 0.275 to 0.790 amp rated rectifiers for working peak reverse voltages from 1500 to 5000 volts are hermetically sealed with void-less glass construction. Typical applications include transmitters, power supplies, radar equipment and X-ray machines. Surface mount MELF package configurations are also available by adding “US” suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • Void-less hermetically sealed glass package. Triple-layer passivation. Lowest reverse leakage available. Absolute high voltage / high temperature stability. RoHS compliant versions available. S Package APPLICATIONS / BENEFITS • • • • • • High voltage standard recovery rectifiers 1500 to 5,000 volts. Military and other high-reliability applications. Applications include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power supplies, transmitters, and radar equipment. High forward surge current capability. Extremely robust construction. Inherently radiation hard as described in Microsemi MicroNote 050. MAXIMUM RATINGS @ TA = 25 oC unless otherwise specified Parameters/Test Conditions Junction Temperature Symbol Value TJ Storage Temperature TSTG -55 to +150 -65 to +150 -65 to +125 -65 to +175 Thermal Resistance Junction-to-Lead @ 3/8 inch (10 mm) lead length from body R ӨJL 38 Working Peak Reverse Voltage: Solder Temperature @ 10 s T4-LDS-0267, Rev. 1 (120963) MC5610 – MC5612 MC5613 – MC5616 MC5617 – MC5619 MC5610 & MC5613 MC5611 & MC5614 MC5612 & MC5615 MC5616 MC5617 MC5618 MC5619 V RWM TSP 1500 2000 2500 3000 4000 4500 5000 260 ©2012 Microsemi Corporation Unit o C o C o C/W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 V MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 o Website: www.microsemi.com C Page 1 of 4 MC5610 thru MC5619 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed void-less hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin over copper. MARKING: Alphanumeric. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 400 milligrams (approx). See Package Dimensions on last page. PART NOMENCLATURE MC 5610 (e3) Micro Class – High Voltage Rectifier RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Type Number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IO IR I ZSM V (BR) VF VR V RWM Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Maximum Rated Surge Current: The non-repetitive peak value of rated surge current at a specified wave form. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Reverse Voltage: The reverse voltage dc value, no alternating component. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. ELECTRICAL CHARACTERISTICS MICROSEMI PART NUMBER MC5610 MC5611 MC5612 MC5613 MC5614 MC5615 MC5616 MC5617 MC5618 MC5619 RMS VOLTAGE V R(RMS) Volts 1050 1400 1750 1050 1400 1750 2100 2800 3150 3500 AVERAGE RECTIFIED CURRENT IO @ T L = (Note 2) 55 oC 100 oC mA 790 630 530 975 790 665 570 330 300 275 mA 415 330 280 515 415 350 300 120 110 100 MAXIMUM FORWARD VOLTAGE V F @ 100 mA Volts 3.0 4.0 5.0 3.0 4.0 5.0 6.0 8.0 9.0 10.0 MAXIMUM REVERSE CURRENT I R @ V RWM MAXIMUM REVERSE CURRENT I R @ V RWM 25 oC 100 oC µA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.5 2.5 2.5 µA 25 25 25 20 20 20 20 50 50 50 MAXIMUM FORWARD SURGE I FS @ 8.3 ms Amps 8 6 5 8 6 5 4 3 2.7 2.5 MAXIMUM REVERSE RECOVERY TIME t rr (Note 1) ns 300 300 300 300 300 300 300 300 300 300 NOTE 1: I F = 50 mA, I RM = 100 mA, I R(REC) = 25 mA. NOTE 2: Heat sink 3/8” from body. T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 2 of 4 MC5610 thru MC5619 IO (mA) GRAPHS T L - LEAD TEMPERATURE FIGURE 1 Average Rectified Current vs. Lead Temperature Lead Temperature (°C) (L=3/8 inch) T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Page 3 of 4 MC5610 thru MC5619 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Package contour optional with BD and length BL. Heat slugs, if any, shall be included within this cylinder length but shall not be subject to minimum limit of BD. 4. The specified lead diameters apply in the zone between .050 inch (1.27 mm) from the diode body and the end of the lead. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0267, Rev. 1 (120963) ©2012 Microsemi Corporation Ltr BD BL LD LL LU DIMENSIONS INCH MILLIMETERS Min Max Min Max .065 .190 .029 1.00 .110 .215 .033 1.25 .050 1.65 4.83 0.74 25.40 2.79 5.46 0.84 31.75 1.27 Notes 3 3 4 Page 4 of 4