MMA001AA

MMA001AA DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier Features • Excellent combination of wide bandwidth, low noise and high associated gain • 1.7dB NF with >15.5dB gain at 10GHz • Output IP3 ~26-29dBm • Input and output matched to 50Ω • 100% DC and RF tested • Chip size: 2.82mm x 1.50mm x 0.1mm Applications • Instrumentation • Electronic warfare • Microwave communications • Radar Gain & NF                               Power & OIP3                               Typical Performance (CW, Typical Device, RF Probe): TA = 25°C, VDD = 8V, IDD = 60mA1 Parameter DC - 6GHz 6 - 18GHz 18 - 22GHz Units Small Signal Gain 15 16 17 dB Noise Figure 3.0 2.0 3.2 dB Output Return Loss 15 15 12 dB Output Power, P1dB 16 15 13 dBm Output Power P3dB 18 17 15 dBm Output IP3 29 28 25 dBm Adjust VGG to set IDD = 60mA, typical value is -0.5V. Recommend IDD ~ 45mA for improved stability down to -55°C 1 MM-PDS-0002 Rev B Subject to Change Without Notice 1 of 12 MMA001AA Table 1: Absolute Maximum Ratings, Not Simultaneous Parameter Rating Units Drain Voltage (VDD) +9 V Gate Voltage (VGG) -2 to 0 V Input Power (PIN) 20 dBm 1502 °C Operating Ambient Temperature (TA) -55 to +85 °C Storage Temperature -65 to +150 °C 40 °C/W Channel Temperature (TC) Thermal Resistance, Channel to Die Backside (RTH) 2 Caution, ESD Sensitive Device MTTF > 10 hours at TC = 150°C 8 Table 2: Specifications (CW, 100% Test): TA = 25°C, VDD = 8V, IDD = 60mA3 Parameter 3 Frequency Min Typ Max Units Small Signal Gain 20GHz 14.5 17 - dB Output Power, P1dB 20GHz 12 14 - dBm Adjust VGG to get IDD = 60mA, typical value is -0.5V RF Probe Measurement Set-Up With Reference Planes4 TO VDD 100nF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND 100nF CAPACITOR TO GROUND MINIMIZE GAP RFOUT RFIN 100nF CAPACITOR TO GROUND 50 TRANSMISSION LINE 100pF CAPACITOR TO GROUND 100nF CAPACITOR TO GROUND TO VGG 1mil Au wire used for all bonds External DC blocks maybe required, refer to Table 3 for more information. 4 Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics MM-PDS-0002 Rev B Subject to Change Without Notice 2 of 12 MMA001AA Typical Performance, RF Probe VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted S11 Over Bias Current                                                             S21 Over Bias Current               S21 Over Temperature                             S22 Over Temperature S22 Over Bias Current                  S11 Over Temperature                        MM-PDS-0002 Rev B Subject to Change Without Notice                3 of 12 MMA001AA Typical Performance, RF Probe VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted              Noise Figure Over Temperature    Noise Figure Over Bias Current                                                                       MM-PDS-0002 Rev B Subject to Change Without Notice                                 OIP3 Over Output Power Per Tone   OIP3 Over Bias Current, 6dBm/tone            OIP3 Over Bias Current, 3dBm/tone OIP3 Over Bias Current, 0dBm/tone                                        4 of 12 MMA001AA Typical Performance, RF Probe VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted P1dB Over Bias Current                        P3dB Over Bias Current                                          IMD3 Sweep   Power Sweep                  MM-PDS-0002 Rev B Subject to Change Without Notice                                     5 of 12 MMA001AA Connectorized Test Fixture With SMK 2.92mm Connectors VDD Feedthru 0.1uF 100pF 100pF 0.1uF RFIN RFOUT 0.1uF 1.000 100pF 100pF 0.1uF VGG Feedthru 0.950 MM-PDS-0002 Rev B Subject to Change Without Notice 6 of 12 MMA001AA Typical Performance, Connectorized Test Fixture VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted S11 Over Temperature        S22 Over Temperature                             S21 Over Temperature                                             MM-PDS-0002 Rev B Subject to Change Without Notice                                          NF Over Temperature, IDQ = 70mA NF Over Temperature, IDQ = 60mA                  NF Over Temperature, IDQ = 50mA                                            7 of 12 MMA001AA Typical Performance, Connectorized Test Fixture VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted P1dB Over Temperature                                    Power Sweep, -40°C                                                       Power Sweep, +85°C                                                       OIP3 Over Temperature, 0dBm/tone          Power Sweep, +25°C               P3dB Over Temperature  MM-PDS-0002 Rev B Subject to Change Without Notice                 8 of 12 MMA001AA Typical Performance, Connectorized Test Fixture VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted              OIP3 Over Temperature, 6dBm/tone   OIP3 Over Temperature, 3dBm/tone                                                                                                                       VGG Over Temperature                MM-PDS-0002 Rev B Subject to Change Without Notice    IMD Sweep, +85°C                     IMD Sweep, +25°C   IMD Sweep, -40°C                        9 of 12 MMA001AA Typical Performance, Connectorized Test Fixture VDS = 8V, IDQ = 60mA, TA = 25°C unless otherwise noted Low-Frequency S21  Low-Frequency S11, S22                           MM-PDS-0002 Rev B Subject to Change Without Notice         10 of 12 MMA001AA Chip layout showing pad locations. All dimensions are in microns. Die thickness is 100 microns. Backside metal is gold, bond pad metal is gold. Refer to Die Handling Application Note MM-APP-0001 (visit www.microsemi.com/mmics).                               Table 3: Pad Descriptions Pad # Description Pad Dimensions (µm) 1, 3, 7, 9 Ground 100 x 100 2 RFIN, Pad Is DC Coupled. Use External DC block 100 x 190 8 RFOUT, Pad Is DC Coupled. Use External DC Block 100 x 190 4 VDD 100 x 100 12 VGG 100 x 100 5, 6, 10, 11 Low Frequency Terminations 100 x 100 Die Backside Must be connected to ground - Biasing 1. Set VGG = -2V 2. Set VDD = 8V 3. Adjust VGG to set IDD MM-PDS-0002 Rev B Subject to Change Without Notice 11 of 12 MMA001AA Information contained in this document is proprietary to Microsemi. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,400 employees globally. Learn more at www.microsemi.com. © 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MM-PDS-0002 Rev B Subject to Change Without Notice 12 of 12