MMA002AA

MMA002AA 5-20GHz, 20dBm P3dB, 18dB Gain Wideband Amplifier Features • 18dB gain with positive gain slope at 5V • 19dB gain with positive gain slope at 3.3V • 19dBm P1dB with 26dBm OIP3 at 5V • ±1dB power flatness • Input and Output matched to 50Ω • 1.35mm x 1.5mm x 0.1mm die size Applications • Instrumentation • Electronic warfare • Microwave communications • Radar                    P1dB, P3dB & OIP3     Gain & Return Loss                                      Typical Performance (CW, Typical Device, RF Probe): TA = 25°C, VD1 = VD2 = 5V Parameter Min Typ Max Units Frequency 5 - 20 GHz Small Signal Gain 17.0 18.5 19.5 dB Input Return Loss 10 12 14 dB Output Return Loss 8 13 15 dB Output Power, P1dB 18.0 19.0 20.5 dBm Output Power P3dB 19.3 20.0 21.5 dBm Output IP3 - 26 - dBm Drain Current - 105 - mA MM-PDS-0003 Rev A Subject to Change Without Notice 1 of 12 MMA002AA Table 1: Absolute Maximum Ratings, Not Simultaneous Parameter Value Drain Voltage (VD1, VD2) +5.5 V 24 dBm 1501 °C Operating Ambient Temperature (TA) -55 to +85 °C Storage Temperature -65 to 150 °C TBD (80 est) °C/W Input Power (PIN) Operating Channel Temperature Thermal Resistasnce, Channel to Die Backside 1 Units Caution, ESD Sensitive Device MTTF > 10 hours at TC = 150°C 8 Table 2: Specifications (CW, 100% Test): TA = 25°C, VD1 = VD2 = 5V Parameter Frequency IDD Min Max Units - - 160 mA Small Signal Gain 6GHz 13.5 - dB Output Power, P1dB 6GHz 17.5 - dBm Small Signal Gain 18GHz 16.5 - dB Output Power, P1dB 18GHz 17.5 - dBm RF Probe Measurement Set-Up With Reference Planes1 TO VDD 100nF CAPACITOR TO GROUND 100nF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND 100pF CAPACITOR TO GROUND RFOUT RFIN 50 TRANSMISSION LINE MINIMIZE GAP 1mil Au wire used for all bonds 1 Reference planes are the same for S-parameter files downloadable on www.microsemi.com/mmics MM-PDS-0003 Rev A Subject to Change Without Notice 2 of 12 MMA002AA Typical Performance, RF Probe VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted            S11 Over Temperature, VDD = 3.3V                  S11 Over VDD                      S11 Over Temperature, VDD = 5.0V S22 Over VDD                                              S22 Over Temperature, VDD = 3.3V              S22 Over Temperature, VDD = 5.0V                                                       MM-PDS-0003 Rev A Subject to Change Without Notice                3 of 12 MMA002AA Typical Performance, RF Probe VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted            S21 Over Temperature, VDD = 3.3V     S21 Over VDD                                                         NF Over Temperature, VDD = 3.3V                        NF Over Temperature, VDD = 5.0V      NF Over VDD                      S21 Over Temperature, VDD = 5.0V                     MM-PDS-0003 Rev A Subject to Change Without Notice                   4 of 12 MMA002AA Typical Performance, RF Probe VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted            P3dB Over VDD       P1dB Over VDD                                                                                Power Sweep, VDD = 5.0V        Power Sweep, VDD = 3.3V      OIP3, VDD = 5.0V   OIP3, VDD = 3.3V                                   MM-PDS-0003 Rev A Subject to Change Without Notice                    5 of 12 MMA002AA Typical Performance, RF Probe           IMD Sweep, VDD = 3.3V               VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted                         IMD Sweep, VDD = 5.0V                           Power and OIP3, VDD = 3.3V                      MM-PDS-0003 Rev A Subject to Change Without Notice    6 of 12 MMA002AA Connectorized Test Fixture With SMK 2.92mm Connectors VD1 Feedthru 0.1uF VD2 Feedthru 100pF 100pF RFIN 0.1uF RFOUT 1.000 0.950 MM-PDS-0003 Rev A Subject to Change Without Notice 7 of 12 MMA002AA Typical Performance, Connectorized Test Fixture VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted S11 Over Temperature    S22 Over Temperature                          S21 Over Temperature                               MM-PDS-0003 Rev A Subject to Change Without Notice          P3dB Over Temperature      P1dB Over Temperature                       NF Over Temperature                                                       8 of 12 MMA002AA Typical Performance, Connectorized Test Fixture VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted Power Sweep, -40°C                       Power Sweep, +25°C                       Power Sweep, +85°C      OIP3, POUT/tone = 0dBm                     OIP3, POUT/tone = 3dBm           MM-PDS-0003 Rev A Subject to Change Without Notice                          OIP3, POUT/tone = 6dBm                                                                           9 of 12 MMA002AA Typical Performance, Connectorized Test Fixture VD1 = VD2 = 5V, IDD = 105mA, TA = 25°C unless otherwise noted IMD3 Sweep, -40°C                                                                                 DC, ID1          Power Sweep, +85°C                    IMD3 Sweep, +25°C                       DC, ID2                     MM-PDS-0003 Rev A Subject to Change Without Notice   10 of 12 MMA002AA Chip layout showing pad locations. All dimensions are in microns. Die thickness is 100 microns. Backside metal is gold, bond pad metal is gold. Refer to Die Handling Application Note MM-APP-0001 (visit www.microsemi.com/mmics). 1296 971 476 4 3 1350 5 2 6 1 7 1057 579 579 383 383 54 1296 1500 Table 3: Pad Descriptions Pad # Description Pad Dimensions (µm) 1, 4, 7 Ground 100 x 100 2 RFIN, Pad is AC coupled 100 x 190 6 RFOUT, Pad is AC coupled 100 x 190 3 VD1 100 x 100 5 VD2 100 x 100 Biasing MMA002AA is self-biased. Apply 5V to VD1 and VD2. Bias sequence does not matter. MM-PDS-0003 Rev A Subject to Change Without Notice 11 of 12 MMA002AA Information contained in this document is proprietary to Microsem. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs, and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif. and has approximately 3,400 employees globally. Learn more at www.microsemi.com. © 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MM-PDS-0003 Rev A Subject to Change Without Notice 12 of 12